APT15GP60BDF1
600V
POWER MOS 7 IGBT
TO-247
®
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
• 100 kHz operation @ 400V, 19A
• 200 kHz operation @ 400V, 12A
• SSOA rated
E
C
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT15GP60BDF1
UNIT
600
±20
±30
56
27
65
65A @ 600V
250
-55 to 150
300
Watts
°C
Amps
Volts
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
500
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
3000
±100
nA
I
GES
Gate-Emitter Leakage Current (V
GE
= ±20V)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7428
Rev B
4-2003
I
CES
µA
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
1
APT15GP60BDF1
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 15A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100µH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 15A
4
5
MIN
TYP
MAX
UNIT
1685
210
15
7.5
55
12
15
65
8
12
29
58
130
152
121
8
12
69
88
130
267
268
MIN
TYP
MAX
UNIT
°C/W
gm
ns
ns
A
nC
V
pF
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Symbol
R
ΘJC
R
ΘJC
W
T
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
44
55
6
R
G
= 5Ω
T
J
= +25°C
µ
J
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 15A
R
G
= 5Ω
T
J
= +125°C
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
66
µ
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
.50
1.31
5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7428
Rev B
4-2003
TYPICAL PERFORMANCE CURVES
30
25
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
APT15GP60BDF1
30
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
, COLLECTOR CURRENT (A)
20
I
C
, COLLECTOR CURRENT (A)
25
20
15
T
C
=25°C
T
C
=-55°C
5
0
0
0.5
1
1.5
2
2.5
3
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
100
TJ = -55°C
T
C
=125°C
15
T
C
=25°C
T
C
=-55°C
5
0
T
C
=125°C
10
10
0
0.5
1
1.5
2
2.5
3
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
14
12
10
8
V
CE
= 480V
6
4
2
0
0
10
20
30
40
50
GATE CHARGE (nC)
FIGURE 4, Gate Charge
60
I
C
= 15A
T
J
= 25°C
I
C
, COLLECTOR CURRENT (A)
80
V
CE
= 120V
V
CE
= 300V
60
40
TJ = 25°C
20
TJ = 125°C
0
0
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3
2.5
I
C
=30A
2
1.5
1
0.5
0
I
C
= 15A
3.5
3
I
C
=30A
2.5
I
C
= 15A
2
I
C
= 7.5A
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 7.5A
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
I
C,
DC COLLECTOR CURRENT(A)
6
0
25
50
75
100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50
-25
4-2003
050-7428
Rev B
0
-50
-25
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT15GP60BDF1
18
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
80
V
GE
=
15V,T
J
=125°C
16
14
12
V
GE
= 15V
10
8
6
4
2
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
T
J
=
25 or 125°C,V
GE
=
10V
70
60
50
40
30
20
10
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
V
CE
= 400V
R
G
= 5Ω
L = 100 µH
V
GE
=
10V,T
J
=25°C
V
GE
=
15V,T
J
=25°C
V
GE
=10V,T
J
=125°C
V
GE
= 10V
V
CE
= 400V
T
J
= 25°C or 125°C
R
G
= 5Ω
L = 100 µH
25
t
r,
RISE TIME (ns)
t
f,
FALL TIME (ns)
80
T
J
=
125°C, V
GE
=
10V or 15V
20
60
T
J
=
25°C, V
GE
=
10V or 15V
15
10
T
J
=
25 or 125°C,V
GE
=
15V
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
400V
40
5
0
20
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
400V
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
700
E
ON2
, TURN ON ENERGY LOSS (µJ)
V
CE
= 400V
L = 100 µH
R
G
= 5
Ω
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
700
E
OFF
, TURN OFF ENERGY LOSS (µJ)
V
CE
= 400V
L = 100 µH
R
G
= 5
Ω
T
J
=
125°C, V
GE
=
10V or 15V
600
500
400
300
200
T
J
=125°C, V
GE
=15V
600
500
400
300
200
100
T
J
=125°C,V
GE
=10V
T
J
= 25°C, V
GE
=15V
100
0
T
J
= 25°C, V
GE
=10V
T
=
25°C, V
GE
=
10V or 15V
0
J
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
900
SWITCHING ENERGY LOSSES (µJ)
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
700
V
CE
= 400V
V
GE
= +15V
R
G
= 5
Ω
SWITCHING ENERGY LOSSES (µJ)
800
700
600
500
400
E
on2
30A
600
500
E
off
30A
E
on2
30A
400
300
200
100
0
-50
E
off
30A
E
on2
15A
300
200
100
0
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
E
on2
7.5A
E
off
7.5A
E
off
15A
4-2003
E
on2
15A
E
off
15A
E
on2
7.5A
E
off
7.5A
Rev B
050-7428
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000
I
C
, COLLECTOR CURRENT (A)
70
Cies
60
50
40
30
20
10
0
APT15GP60BDF1
1,000
C, CAPACITANCE ( F)
500
Coes
100
50
Cres
10
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
P
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0
0.60
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.50
0.9
0.40
0.7
0.30
0.5
Note:
PDM
0.20
0.3
0.10
0.1
0.05
0
10
-5
10
-4
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
292
F
MAX
, OPERATING FREQUENCY (kHz)
RC MODEL
Junction
temp. ( ”C)
0.216
Power
(Watts)
0.284
Case temperature
0.164
0.00600
100
50
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 50
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
T
J
= 125
°
C
T
C
= 75
°
C
D = 50 %
V
CE
= 400V
R
G
= 5
Ω
5
10
F
max
=
min(f
max1
, f
max 2
)
f
max1
=
f
max 2
=
P
diss
=
t
d (on )
0.05
+
t
r
+
t
d(off )
+
t
f
4-2003
050-7428
Rev B
P
diss
−
P
cond
E
on 2
+
E
off
T
J
−
T
C
R
θ
JC
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