VISHAY
BAV19WS / 20WS / 21WS
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• For general purpose
• These diodes are also available in other case
styles including: the DO-35 case with the type des-
ignation BAV19 - BAV21, the MiniMELF case with
the type designation BAV100 - BAV103, the
SOT-23 case with the type designation BAS19 -
BAS21 and the SOD-123 case with the type des-
ignation BAV19W - BAV21W
17431
Mechanical Data
Case:
SOD-323 Plastic case
Weight:
approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAV19WS
BAV20WS
BAV21WS
Type differentiation
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
Ordering code
BAV19WS-GS18 or BAV19WS-GS08
BAV20WS-GS18 or BAV20WS-GS08
BAV21WS-GS18 or BAV21WS-GS08
A8
A9
AA
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Document Number 85726
Rev. 1.3, 08-Jul-04
www.vishay.com
1
BAV19WS / 20WS / 21WS
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Continuous reverse voltage
Test condition
Part
BAV19WS
BAV20WS
BAV21WS
Repetitive peak reverse voltage
BAV19WS
BAV20WS
BAV21WS
DC Forward current
Rectified current (average) half
wave rectification with resist.
load
Repetitive peak forward current
Surge forward current
Power dissipation
T
amb
= 25 °C
T
amb
= 25 °C
Symbol
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
F
I
F(AV)
Value
100
150
200
120
200
250
250
1)
200
1)
VISHAY
Unit
V
V
V
V
V
V
mA
A
f
≥
50 Hz,
θ
= 180 °,
T
amb
= 25 °C
t < 1 s, T
j
= 25 °C
T
amb
= 25 °C
I
FRM
I
FSM
P
tot
625
1)
1
200
1)
mA
A
mW
1) Valid provided that leads are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1) Valid provided that leads are kept at ambient temperature
Test condition
Symbol
R
thJA
T
j
T
S
Value
650
1)
150
1)
- 65 to + 175
1)
Unit
°C/W
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
V
R
= 100 V, T
j
= 100 °C
V
R
= 150 V
V
R
= 150 V, T
j
= 100 °C
V
R
= 200 V
V
R
= 200 V, T
j
= 100 °C
Dynamic forward resistance
Diode capacitance
Reverse recovery time
I
F
= 10 mA
V
R
= 0, f = 1 MHz
I
F
= 30 mA, I
R
= 30 mA,
I
rr
= 3 mA, R
L
= 100
Ω
BAV19WS
BAV19WS
BAV20WS
BAV20WS
BAV21WS
BAV21WS
Part
Symbol
V
F
V
F
I
R
I
R
I
R
I
R
I
R
I
R
r
f
C
tot
t
rr
5
1.5
50
Min
Typ.
Max
1.00
1.25
100
15
100
15
100
15
Unit
V
V
nA
µA
nA
µA
nA
µA
Ω
pF
ns
www.vishay.com
2
Document Number 85726
Rev. 1.3, 08-Jul-04
VISHAY
BAV19WS / 20WS / 21WS
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
r
f
- Dynamic Forward Resistance (
Ω
)
1000
I
F
- Forward Current ( mA )
100
100
T
j
= 100
°
C
10
1
25
°
C
10
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1
18861
1
18858
V
F
- Forward Voltage ( V )
10
I
F
- Forward Current ( mA )
100
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Dynamic Forward Resistance vs. Forward Current
I
O
, I
F
- Admissible Forward Current ( A )
I
R
( T
j
) / I
R
( 25
°
C ) - Leakage Current
0.3
1000
100
0.2
DC current I
F
Current (rectif.) I
O
10
Reverse Voltage
BAV100 V
R
= 50 V
BAV101 V
R
= 100 V
BAV102 V
R
= 150 V
BAV103 V
R
= 200 V
0.1
1
0
0
30
60
90
120
150
T
amb
- Ambient Temperature (
°C
)
18859
18862
0.1
0 20 40 60 80 100 120 140 160 180 200
T
j
- Junction Temperature (
°
C )
Figure 2. Admissible Forward Current vs. Ambient Temperature
Figure 5. Leakage Current vs. Junction Temperature
P
tot
- Admissible Power Dissipation ( W )
250
200
C
tot
- Capacitance ( pF )
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18863
T
j
= 25
°
C
150
100
50
0
0
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (
°C
)
1
10
100
18864
V
R
- Reverse Voltage ( V )
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 6. Capacitance vs. Reverse Voltage
Document Number 85726
Rev. 1.3, 08-Jul-04
www.vishay.com
3
BAV19WS / 20WS / 21WS
Vishay Semiconductors
Package Dimensions in mm (Inches)
VISHAY
1.25 (0.049) max.
0.1 (0.004) max.
0.3 (0.012)
0.25 (0.010) min.
0.15 (0.006) max.
Mounting Pad Layout
Cathode Band
2.85 (0.112)
2.50 (0.098)
1.95 (0.076)
1.60 (0.062)
1.40 (0.055)
ISO Method E
1.60 (0.062)
1.5 (0.059)
1.1 (0.043)
0.39 (0.015)
17443
www.vishay.com
4
Document Number 85726
Rev. 1.3, 08-Jul-04
VISHAY
BAV19WS / 20WS / 21WS
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85726
Rev. 1.3, 08-Jul-04
www.vishay.com
5
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