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1N6373/4H-E3

Description
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size96KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

1N6373/4H-E3 Overview

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

1N6373/4H-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1.5KE
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Minimum breakdown voltage6 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT APPLICABLE
polarityUNIDIRECTIONAL
Maximum power dissipation6.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
5.0 V to 18 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE-18C).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs
waveform
(1)
(Fig.
3)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Document Number: 88356
Revision: 12-Feb-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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