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1N4150/D4

Description
DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size59KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

1N4150/D4 Overview

DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode

1N4150/D4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VISHAY
1N4150
Vishay Semiconductors
Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• High forward current capability
Applications
High speed switch and general purpose use in com-
puter and industrial applications
94 9367
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 300 mg
Packaging Codes/Options:
D3/10 K per 13" reel (8 mm tape), 30 K/box
D4/3 K per 7" reel (8 mm tape), 30 K/box
Parts Table
Part
1N4150
Type differentiation
Single Diodes
Ordering code
Remarks
DO35
Package
1N4150-TAP / 1N4150-TR Ammopack / Tape and
Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average peak forward current
Forward current
Average forward current
Power dissipation
V
R
= 0
V
R
= 0
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
25 °C
t
p
= 1 µs
Test condition
Sub type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAv
P
V
P
V
Value
50
50
4
600
300
150
440
500
Unit
V
V
A
mA
mA
mA
mW
mW
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
175
- 65 to + 175
Unit
K/W
°C
°C
Document Number 85522
Rev. 5, 21-Nov-02
www.vishay.com
1

1N4150/D4 Related Products

1N4150/D4 1N4150/D3
Description DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode DIODE 0.15 A, 50 V, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code DO-35 DO-35
package instruction O-LALF-W2 O-LALF-W2
Contacts 2 2
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2
JESD-609 code e2 e2
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Maximum output current 0.15 A 0.15 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 50 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount NO NO
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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