5962-9060001PA amplifier basic information:
5962-9060001PA is an OPERATIONAL AMPLIFIER. The commonly used packaging method is CERDIP-8
5962-9060001PA amplifier core information:
The minimum operating temperature of 5962-9060001PA is -55 °C and the maximum operating temperature is 125 °C. Its peak reflow temperature is NOT SPECIFIED Maximum bias current at 25°C: 20 µA
The manufacturer's maximum slew rate for the 5962-9060001PA is 18 mA, while the minimum slew rate is 430 V/us.
The nominal supply voltage of 5962-9060001PA is 5 V, and its corresponding nominal negative supply voltage is -5 V. The input offset voltage of 5962-9060001PA is 9000 µV (Input offset voltage: the compensation voltage between the two input terminals required to make the output terminal of the operational amplifier 0V (or close to 0V).) The width of 5962-9060001PA is: 7.62 mm .
Related dimensions of 5962-9060001PA:
5962-9060001PA has 8 terminals. Its terminal position type is: DUAL. Terminal pitch is 2.54 mm. Total pins: 8
5962-9060001PA amplifier additional information:
5962-9060001PA adopts the CURRENT-FEEDBACK architecture. It does not belong to the low offset class of amplifiers. The frequency compensation status of 5962-9060001PA is: YES. Its temperature grade is: MILITARY. 5962-9060001PA is not Rohs certified.
The corresponding JESD-30 code is: R-GDIP-T8. The corresponding JESD-609 code is: e0. The packaging code of 5962-9060001PA is: DIP. The materials used in the 5962-9060001PA package are mostly CERAMIC and GLASS-SEALED. The package shape is RECTANGULAR.
The 5962-9060001PA package pin format is: IN-LINE. Its terminal form is: THROUGH-HOLE. The maximum seat height is 5.08 mm.
5962-9060001PA amplifier basic information:
5962-9060001PA is an OPERATIONAL AMPLIFIER. The commonly used packaging method is CERDIP-8
5962-9060001PA amplifier core information:
The minimum operating temperature of 5962-9060001PA is -55 °C and the maximum operating temperature is 125 °C. Its peak reflow temperature is NOT SPECIFIED Maximum bias current at 25°C: 20 µA
The manufacturer's maximum slew rate for the 5962-9060001PA is 18 mA, while the minimum slew rate is 430 V/us.
The nominal supply voltage of 5962-9060001PA is 5 V, and its corresponding nominal negative supply voltage is -5 V. The input offset voltage of 5962-9060001PA is 9000 µV (Input offset voltage: the compensation voltage between the two input terminals required to make the output terminal of the operational amplifier 0V (or close to 0V).) The width of 5962-9060001PA is: 7.62 mm .
Related dimensions of 5962-9060001PA:
5962-9060001PA has 8 terminals. Its terminal position type is: DUAL. Terminal pitch is 2.54 mm. Total pins: 8
5962-9060001PA amplifier additional information:
5962-9060001PA adopts the CURRENT-FEEDBACK architecture. It does not belong to the low offset class of amplifiers. The frequency compensation status of 5962-9060001PA is: YES. Its temperature grade is: MILITARY. 5962-9060001PA is not Rohs certified.
The corresponding JESD-30 code is: R-GDIP-T8. The corresponding JESD-609 code is: e0. The packaging code of 5962-9060001PA is: DIP. The materials used in the 5962-9060001PA package are mostly CERAMIC and GLASS-SEALED. The package shape is RECTANGULAR.
The 5962-9060001PA package pin format is: IN-LINE. Its terminal form is: THROUGH-HOLE. The maximum seat height is 5.08 mm.
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor(TI ) |
| Parts packaging code | DIP |
| package instruction | CERDIP-8 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Amplifier type | OPERATIONAL AMPLIFIER |
| Architecture | CURRENT-FEEDBACK |
| Maximum bias current (IIB) at 25C | 20 µA |
| Nominal Common Mode Rejection Ratio | 45 dB |
| frequency compensation | YES |
| Maximum input offset voltage | 9000 µV |
| JESD-30 code | R-GDIP-T8 |
| JESD-609 code | e0 |
| low-dissonance | NO |
| Negative supply voltage upper limit | -7 V |
| Nominal Negative Supply Voltage (Vsup) | -5 V |
| Number of functions | 1 |
| Number of terminals | 8 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP8,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | +-5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 |
| Maximum seat height | 5.08 mm |
| minimum slew rate | 430 V/us |
| Maximum slew rate | 18 mA |
| Supply voltage upper limit | 7 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | BIPOLAR |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) - hot dipped |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| broadband | YES |
| width | 7.62 mm |
| Base Number Matches | 1 |
| 5962-9060001PA | CLC410AJE | CLC410AJE-TR13 | CLC410MDC | CL410M01C | |
|---|---|---|---|---|---|
| Description | IC OP-AMP, 9000 uV OFFSET-MAX, CDIP8, CERDIP-8, Operational Amplifier | IC OP-AMP, 5000 uV OFFSET-MAX, PDSO8, PLASTIC, SOIC-8, Operational Amplifier | IC OP-AMP, 5000 uV OFFSET-MAX, 200 MHz BAND WIDTH, PDSO8, 0.150 INCH, PLASTIC, SOIC-8, Operational Amplifier | IC OP-AMP, 5000 uV OFFSET-MAX, UUC7, Operational Amplifier | IC OP-AMP, 5000 uV OFFSET-MAX, UUC7, DIE, Operational Amplifier |
| Parts packaging code | DIP | SOIC | SOIC | WAFER | WAFER |
| package instruction | CERDIP-8 | SOP, SOP8,.25 | SOP, SOP8,.25 | DIE, | DIE |
| Contacts | 8 | 8 | 8 | 7 | 7 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Amplifier type | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| Nominal Common Mode Rejection Ratio | 45 dB | 50 dB | 50 dB | 50 dB | 50 dB |
| Maximum input offset voltage | 9000 µV | 5000 µV | 5000 µV | 5000 µV | 5000 µV |
| JESD-30 code | R-GDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | X-XUUC-N7 | X-XUUC-N7 |
| Nominal Negative Supply Voltage (Vsup) | -5 V | -5 V | -5 V | -5 V | -5 V |
| Number of functions | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 8 | 8 | 8 | 7 | 7 |
| Package body material | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIP | SOP | SOP | DIE | DIE |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | UNSPECIFIED | UNSPECIFIED |
| Package form | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | UNCASED CHIP | UNCASED CHIP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Supply voltage upper limit | 7 V | 7 V | 7 V | 7 V | 7 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | YES | YES | YES | YES |
| Terminal form | THROUGH-HOLE | GULL WING | GULL WING | NO LEAD | NO LEAD |
| Terminal location | DUAL | DUAL | DUAL | UPPER | UPPER |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | - | - |
| Maker | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | - |
| Architecture | CURRENT-FEEDBACK | CURRENT-FEEDBACK | CURRENT-FEEDBACK | - | - |
| Maximum bias current (IIB) at 25C | 20 µA | 20 µA | 20 µA | - | - |
| frequency compensation | YES | YES | YES | - | - |
| JESD-609 code | e0 | e0 | e0 | - | - |
| low-dissonance | NO | NO | NO | - | - |
| Negative supply voltage upper limit | -7 V | -7 V | - | -7 V | -7 V |
| Maximum operating temperature | 125 °C | 85 °C | 85 °C | - | - |
| Minimum operating temperature | -55 °C | -40 °C | -40 °C | - | - |
| Encapsulate equivalent code | DIP8,.3 | SOP8,.25 | SOP8,.25 | - | - |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| power supply | +-5 V | +-5 V | +-5 V | - | - |
| Maximum seat height | 5.08 mm | 1.75 mm | 1.75 mm | - | - |
| minimum slew rate | 430 V/us | 430 V/us | 430 V/us | - | - |
| Maximum slew rate | 18 mA | 18 mA | 18 mA | - | - |
| technology | BIPOLAR | BIPOLAR | BIPOLAR | - | - |
| Temperature level | MILITARY | INDUSTRIAL | INDUSTRIAL | - | - |
| Terminal surface | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - |
| Terminal pitch | 2.54 mm | 1.27 mm | 1.27 mm | - | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| broadband | YES | YES | YES | - | - |
| width | 7.62 mm | 3.9 mm | 3.9 mm | - | - |
| Maximum average bias current (IIB) | - | 20 µA | - | 20 µA | 20 µA |
| Nominal slew rate | - | 700 V/us | 700 V/us | 1600 V/us | 1600 V/us |