MICROWAVE CORPORATION
v02.0304
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
Features
Gain: 15.5 dB
Saturated Power: +22 dBm @ 23% PAE
Single Supply Voltage:
+5.0 V w/ Optional Gate Bias
50 Ohm Matched Input/Output
1
AMPLIFIERS - CHIP
Typical Applications
The HMC441 is ideal for use as a medium power
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• LO Driver for HMC Mixers
• Military EW & ECM
Functional Diagram
General Description
The HMC441 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between
6.0 and 18.0 GHz*. The amplifier provides 15.5
dB of gain, +22 dBm of saturated power, and 23%
PAE from a +5.0 V supply voltage. An optional
gate bias is provided to allow adjustment of gain,
RF output power, and DC power dissipation. The
HMC441 amplifier can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small
(.99mm
2
) size. The backside of the die is both
RF and DC ground, simplifying the assembly
process and reducing performance variation.
All data is tested with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Vgg1, Vgg2: Optional Gate Bias
Electrical Specifications,
T
A
= +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
15.5
17
13
Min.
Typ.
7.0 - 8.0
15.5
0.015
10
14
18.5
20
29
5.0
90
16
18
0.02
14
Max.
Min.
Typ.
8.0 - 12.5
16.5
0.015
13
17
19
21
31
4.5
90
17
19
0.02
13
Max.
Min.
Typ.
12.5 - 14.0
15.5
0.015
15
23
20
22
32
4.5
90
17
19
0.02
12
Max.
Min.
Typ.
14.0 - 15.5
14.5
0.015
14
18
20
22
32
4.5
90
0.02
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
*Contact HMC for Electrical Spec Limits for 6-7 & 15.5 - 18 GHz.
1 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0304
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
GaAs MMIC SUB-HARMONICALLY
Gain vs. Temperature
PUMPED MIXER
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
17 - 25 GHz
20
18
16
S21
1
5
0
-5
-10
-15
-20
-25
-30
4
6
8
10
14
GAIN (dB)
S11
S22
12
10
8
6
4
2
0
+25 C
+85 C
-55 C
12
14
16
18
20
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-2
-4
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
-35
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
P1dB vs. Temperature
25
24
23
22
P1dB (dBm)
Psat vs. Temperature
25
24
23
22
Psat (dBm)
21
20
19
18
17
16
15
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
21
20
19
18
17
16
15
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 61
AMPLIFIERS - CHIP
MICROWAVE CORPORATION
v02.0304
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
1
AMPLIFIERS - CHIP
Power Compression @ 11 GHz
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-10
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
Power Compression @ 15 GHz
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-10
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
-8
-6
-4
-2
0
2
4
6
8
10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
36
34
32
30
OIP3 (dBm)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
+25 C
+85 C
-55 C
7
6
5
4
3
2
1
0
28
26
24
22
20
18
16
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 11 GHz
24
GAIN (dB), P1dB (dBm), Psat (dBm)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
+25 C
+85 C
-55 C
22
20
18
16
14
12
10
2.7
Gain
P1dB
Psat
-20
-30
-40
-50
-60
3
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
6
7
8
9
10
11
12
13
14
15
16
17
18
Vdd Supply Voltage (Vdc)
FREQUENCY (GHz)
1 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0304
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
Gain, Power & Output IP3
vs. Gate Voltage @ 12 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
35
30
25
20
15
10
5
0
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
Gain
P1dB
Psat
OIP3
Idd
210
180
150
120
90
60
30
0
1
Idd (mA)
Vgg1, Vgg2 Gate Voltage (Vdc)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
Gate Bias Voltage (Vgg1,Vgg2)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 10 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-8.0 to 0 Vdc
+20 dBm
175 °C
0.9 W
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+2.7
+3.0
Idd (mA)
88
90
92
80
82
83
100 °C/W
-65 to +150 °C
-55 to +85 °C
+3.3
Note: Amplifier will operate over full voltage ranges shown above
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 63
AMPLIFIERS - CHIP
MICROWAVE CORPORATION
v02.0304
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
1
AMPLIFIERS - CHIP
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Pad Descriptions
Pin Number
Function
Description
This pad is AC coupled and matched to 50 Ohms from
7 - 15.5 GHz.
Interface Schematic
1
RF IN
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. An external bypass
capacitor of 100 pF is required.
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
7 -15.5 GHz.
5, 6
Vgg1, Vgg2
Optional gate control for amplifier. If left open, the amplifier
will run at standard current. Negative voltage applied will
reduce current.
1 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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