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5962-9690101HMX

Description
Memory Circuit, 512KX16, CMOS, CQFP68, 22 X 22 MM, HERMETIC SEALED, CERAMIC, QFP-68
Categorystorage    storage   
File Size1000KB,11 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

5962-9690101HMX Overview

Memory Circuit, 512KX16, CMOS, CQFP68, 22 X 22 MM, HERMETIC SEALED, CERAMIC, QFP-68

5962-9690101HMX Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1337748707
Parts packaging codeQFP
package instructionQFP,
Contacts68
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresSRAM IS ORGANISED AS 512K X 16
JESD-30 codeS-CQFP-G68
length22.4 mm
memory density8388608 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals68
word count524288 words
character code512000
Operating modeASYNCHRONOUS
organize512KX16
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFP
Package shapeSQUARE
Package formFLATPACK
Certification statusNot Qualified
Maximum seat height5.1 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationQUAD
width22.4 mm
WSF512K16-XXX
512K
X
16 SRAM / NOR FLASH MODULE (SMD 5962-96901*)
FEATURES

Access Times of 35ns (SRAM) and 90ns (FLASH)

Access Times of 70ns (SRAM) and 120ns (FLASH)

Packaging
• 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic
HIP (Package 402)
• 68 lead, Hermetic CQFP (G2), 22mm (0.880") square
(Package 500). Designed to fit JEDEC 68 lead 0.990”
CQFJ footprint (FIGURE 2)

512Kx16 5V SRAM

512Kx16 5V NOR FLASH

Organized as 512Kx16 of SRAM and 512Kx16 of Flash
Memory with separate Data Busses

Both blocks of memory are User Configurable as 1Mx8

Low Power CMOS

Commercial, Industrial and Military Temperature Ranges

TTL Compatible Inputs and Outputs

Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation

Weight - 13 grams typical
FLASH MEMORY FEATURES

100,000 Erase/Program Cycles Minimum

Sector Architecture
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase

5 Volt Programming

Embedded Erase and Program Algorithms

Hardware Write Protection

Page Program Operation and Internal Program Control
Time.
This product is subject to change without notice.
Note: For Flash programming information and waveforms refer to Flash Programming 4M5
Application Note AN0037.
* For reference only. See table page 10
FIGURE 1 – PIN CONFIGURATION
FOR WSF512K16-XH2X
TOP VIEW
1
SD8
SD9
SD10
A13
A14
A15
A16
A18
SD0
SD1
SD2
11
22
12
SWE2#
SCS2#
GND
SD11
A10
A11
A12
V
CC
SCS1#
NC
SD3
33
23
SD15
SD14
SD13
SD12
OE#
A17
SWE1#
SD7
SD6
SD5
SD4
FD8
FD9
FD10
A6
A7
NC
A8
A9
FD0
FD1
FD2
44
34
V
CC
FCS2#
FWE2#
FD11
A3
A4
A5
FWE1#
FCS1#
GND
FD3
55
45
FD15
FD14
FD13
FD12
A0
A1
A2
FD7
FD6
FD5
FD4
66
56
PIN DESCRIPTION
FD0-15
SD0-15
A0-18
SWE1-2#
SCS1-2#
OE#
V
CC
GND
NC
FWE1-2#
FCS1-2#
Flash Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
BLOCK DIAGRAM
S W E 1 # S CS1# S W E 2 # S CS2# F W E 1 # F CS1# F W E 2 # F CS2#
OE#
A0-18
512K x 8
SRAM
512K x 8
SRAM
512K x 8
FLASH
512K x 8
FLASH
8
8
8
8
SD0-7
SD8-15
FD0-7
FD8-15
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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