DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BZX585 series
Voltage regulator diodes
Product specification
Supersedes data of 2000 Jun 06
2000 Oct 20
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 300 mW
•
Two tolerance series:
±2%
and
±5%
•
Working voltage range: nom. 2.4 to 15 V (E24 range).
APPLICATIONS
•
General regulation functions.
handbook, halfpage
BZX585 series
PINNING
PIN
1
2
1
DESCRIPTION
Low-power voltage regulator diodes in a small plastic SMD
SOD523 package. The diodes are available in the
normalized E24
±2%
(BZX585-B) and
±5%
(BZX585-C)
tolerance range. The series consists of 20 types with
nominal working voltages from 2.4 to 15 V.
Top view
Fig.1 Simplified outline (SOD523) and symbol.
MARKING
TYPE
NUMBER
BZX585-B2V4
BZX585-B2V7
BZX585-B3V0
BZX585-B3V3
BZX585-B3V6
BZX585-B3V9
BZX585-B4V3
BZX585-B4V7
BZX585-B5V1
BZX585-B5V6
MARKING
CODE
C1
C2
C3
C4
C5
C6
C7
C8
C9
C0
TYPE
NUMBER
BZX585-B6V2
BZX585-B6V8
BZX585-B7V5
BZX585-B8V2
BZX585-B9V1
BZX585-B10
BZX585-B11
BZX585-B12
BZX585-B13
BZX585-B15
MARKING
CODE
E1
E2
E3
E4
E5
E6
E7
E8
E9
E0
TYPE
NUMBER
BZX585-C2V4
BZX585-C2V7
BZX585-C3V0
BZX585-C3V3
BZX585-C3V6
BZX585-C3V9
BZX585-C4V3
BZX585-C4V7
BZX585-C5V1
BZX585-C5V6
,
cathode
anode
MARKING
CODE
F1
F2
F3
F4
F5
F6
F7
F8
F9
F0
DESCRIPTION
2
MAM387
TYPE
NUMBER
MARKING
CODE
H1
H2
H3
H4
H5
H6
H7
H8
H9
H0
BZX585-C6V2
BZX585-C6V8
BZX585-C7V5
BZX585-C8V2
BZX585-C9V1
BZX585-C10
BZX585-C11
BZX585-C12
BZX585-C13
BZX585-C15
2000 Oct 20
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
CONDITIONS
−
MIN.
BZX585 series
MAX.
200
UNIT
mA
see Table 1
−
−65
−
300
+150
150
mW
°C
°C
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm
2
Cu area at cathode tab.
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX585-B/C2V4
BZX585-B/C2V7
BZX585-B/C3V0
BZX585-B/C3V3
BZX585-B/C3V6
BZX585-B/C3V9
BZX585-B/C4V3
BZX585-B/C4V7
BZX585-B/C5V1
BZX585-B/C5V6
BZX585-B/C6V2
BZX585-B/C6V8
BZX585-B/C7V5
BZX585-B/C8V2
BZX585-B/C9V1
BZX585-B/C10
BZX585-B/C11
BZX585-B/C12
BZX585-B/C13
BZX585-B/C15
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 10.5V
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
CONDITIONS
I
F
= 10 mA; see Fig.2
0.9
MAX.
V
UNIT
2000 Oct 20
3
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Table 1
Per type BZX585-B/C2V4 to
B/C15
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
4
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
Tol.
±5%
(C)
MIN.
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
MAX.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
MAX.
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
2.2
3.0
3.6
4.3
5.2
6.0
6.9
7.9
8.8
10.7
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 3 and 4)
TYP.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
2000 Oct 20
Philips Semiconductors
Voltage regulator diodes
BZX585-
B or C
XXX
BZX585 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
CONDITIONS
note 1
note 2
BZX585 series
VALUE
350
65
UNIT
K/W
K/W
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm
2
Cu area at cathode tab.
2. Solder point at cathode tab.
2000 Oct 20
5
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