V
CE
I
C
=
=
1700 V
1800 A
ABB HiPak
IGBT Module
5SNA 1800E170100
Doc. No. 5SYA 1554-04Feb 14
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for good
EMC
Industry standard package
High power density
AlSiC base-plate for high power cycling
capability
AlN substrate for low thermal resistance
Improved high reliability package
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
2)
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
1
M
2
M
3
Conditions
V
GE
= 0 V, T
vj
25 °C
T
c
= 80 °C
t
p
= 1 ms, T
c
= 80 °C
min
max
1700
1800
3600
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
20
11000
1800
3600
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 1200 V, V
CEM CHIP
1700 V
V
GE
15 V, T
vj
125 °C
1 min, f = 50 Hz
-50
-50
-50
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
16500
10
4000
150
125
125
125
6
10
3
1)
2)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1800E170100
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
4)
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3)
Symbol
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 1800 A, V
GE
= 15 V
V
CE
= 1700 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1700
2.0
2.3
typ
max
Unit
V
2.3
2.6
50
2.6
2.9
12
120
500
6.5
V
V
mA
mA
nA
V
µC
V
CE
= 0 V, V
GE
=
20
V, T
vj
= 125 °C
I
C
= 240 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 1800 A, V
CE
= 900 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 900 V,
I
C
= 1800 A,
R
G
= 0.82
,
V
GE
=
15
V,
L
= 60 nH, inductive load
V
CC
= 900 V,
I
C
= 1800 A,
R
G
= 0.82
,
V
GE
=
15
V,
L
= 60 nH, inductive load
V
CC
= 900 V, I
C
= 1800 A,
V
GE
= ±15 V, R
G
= 0.82
,
L
= 60 nH, inductive load
V
CC
= 900 V, I
C
= 1800 A,
V
GE
= ±15 V, R
G
= 0.82
,
L
= 60 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
-500
4.5
15.1
166
16.5
6.98
290
300
230
250
920
1000
215
230
380
nF
ns
ns
ns
ns
Turn-on switching energy
E
on
mJ
550
560
mJ
700
8500
10
T
C
= 25 °C
T
C
= 125 °C
0.06
0.085
A
nH
mΩ
Turn-off switching energy
Short circuit current
Module stray inductance
Resistance, terminal-chip
3)
4)
E
off
I
SC
L
CE
R
CC’+EE’
t
psc
≤ 10 μs, V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 1200 V, V
CEM CHIP
≤ 1700 V
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1554-04Feb 14
page 2 of 9
5SNA 1800E170100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 1800 A
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
V
CC
= 900 V,
I
F
= 1800 A,
V
GE
=
15
V,
R
G
= 0.82
L
= 60 nH
inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1.4
1.4
typ
1.65
1.7
1140
1460
440
780
590
890
310
540
max
2.0
2.0
Unit
V
A
µC
ns
mJ
Reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
5)
6)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
Parameter
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
Thermal resistance case
to heatsink
2)
2)
Symbol
R
th(j-c)IGBT
R
th(j-c)DIODE
R
th(c-h)
Conditions
min
typ
max
0.009
Unit
K/W
0.017 K/W
per module,
grease = 1W/m
x
K
0.006
K/W
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter
Dimensions
Comparative tracking index
Clearance distance
Surface creepage distance
Weight
Symbol
L
x
W
x
Conditions
min
600
typ
max
Unit
mm
H Typical , see outline drawing
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
190
x
140
x
38
23
19
CTI
D
C
D
SC
mm
mm
1210
g
according to IEC 60664-1 Term. to base: 28.2
and EN 50124-1
Term. to term: 28.2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1554-04Feb 14
page 3 of 9
5SNA 1800E170100
Electrical configuration
9
3
7
5
2
1
8
6
4
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1554-04Feb 14
page 4 of 9
5SNA 1800E170100
3600
3200
25 °C
2800
125 °C
2400
3600
V
CE
= 25 V
3200
2800
2400
2000
1600
1200
800
400
V
GE
= 15 V
I
C
[A]
1600
1200
800
400
0
0
1
2
V
CE
[V]
3
4
5
I
C
[A]
2000
125 °C
25 °C
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
3600
3200
2800
2400
2000
1600
1200
800
400
T
vj
= 25 °C
0
0
1
2
3
V
CE
[V]
4
5
6
17V
15V
13V
11V
3600
3200
2800
2400
11V
2000
1600
1200
800
400
T
vj
= 125 °C
0
0
1
2
3
V
CE
[V]
4
5
6
9V
17V
15V
13V
I
C
[A]
Fig. 3
Typical output characteristics, chip level
I
C
[A]
9V
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1554-04Feb 14
page 5 of 9
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