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BDP951-E6327

Description
Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size127KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BDP951-E6327 Overview

Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

BDP951-E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.8 V
Base Number Matches1

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