VISHAY
BAS381 / 382 / 383
Vishay Semiconductors
Small Signal Schottky Barrier Diodes
Features
•
•
•
•
•
Integrated protection ring against static discharge
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
9612315
Applications
General purpose and switching Schottky barrier diode
HF-Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Mechanical Data
Case:
MicroMELF Glass Case
Weight:
approx. 12 mg
Cathode Band Color:
Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
BAS381
BAS382
BAS383
Type differentiation
V
R
= 40 V
V
R
= 50 V
V
R
= 60 V
Ordering code
BAS381-GS18 or BAS381-GS08
BAS382-GS18 or BAS382-GS08
BAS383-GS18 or BAS383-GS08
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Test condition
Part
BAS381
BAS382
BAS383
Peak forward surge current
Repetitive peak forward current
Forward current
t
p
= 1 s
Symbol
V
R
V
R
V
R
I
FSM
I
FRM
I
F
Value
40
50
60
500
150
30
Unit
V
V
V
mA
mA
mA
Document Number 85503
Rev. 1.8, 27-Apr-04
www.vishay.com
1
BAS381 / 382 / 383
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
Symbol
R
thJA
T
j
T
stg
Value
320
125
- 65 to + 150
VISHAY
Unit
K/W
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 15 mA
Reverse current
Diode capacitance
V
R
= V
Rmax
V
R
= 1 V, f = 1 MHz
Symbol
V
F
V
F
V
F
I
R
C
D
Min
Typ.
Max
330
410
1
200
1.6
Unit
mV
mV
V
nA
pF
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
P - Reverse Power Dissipation ( mW )
R
14
12
10
8
6
4
2
0
25
50
75
100
R
thJA
= 540 K/W
I
R
- Reverse Current (
µA
)
ı
V
R
= 60 V
1000
V
R
= V
RRM
100
P
R
- Limit @ 100 % V
R
10
P
R
- Limit @ 80 % V
R
1
125
150
15795
0.1
25
50
75
100
125
150
15794
T
j
- Junction Temperature (
°
C )
T
j
- Junction Temperature (
°
C )
Fig. 1 Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 Reverse Current vs. Junction Temperature
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2
Document Number 85503
Rev. 1.8, 27-Apr-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
BAS381 / 382 / 383
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85503
Rev. 1.8, 27-Apr-04
www.vishay.com
5
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