Flash, 8MX8, 35ns, PBGA40, 8 X 15 MM, 0.80 MM PITCH, FBGA-40
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Parts packaging code | BGA |
| package instruction | BGA, |
| Contacts | 40 |
| Reach Compliance Code | compliant |
| ECCN code | 3A991.B.1.A |
| Maximum access time | 35 ns |
| Other features | 100K PROGRAM/ERASE CYCLES MIN; DATA RETENTION 10 YEARS |
| Data retention time - minimum | 10 |
| JESD-30 code | R-PBGA-B40 |
| JESD-609 code | e0 |
| memory density | 67108864 bit |
| Memory IC Type | FLASH |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 40 |
| word count | 8388608 words |
| character code | 8000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 8MX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | BGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 |
| Programming voltage | 3 V |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 2.7 V |
| Nominal supply voltage (Vsup) | 3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | BALL |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 30 |
| type | NAND TYPE |
| Base Number Matches | 1 |
| AM30LV0064DJ40WEI | AM30LV0064DJ40WEC | AM30LV0064DK40WEC | AM30LV0064DK40WEI | |
|---|---|---|---|---|
| Description | Flash, 8MX8, 35ns, PBGA40, 8 X 15 MM, 0.80 MM PITCH, FBGA-40 | Flash, 8MX8, 35ns, PBGA40, 8 X 15 MM, 0.80 MM PITCH, FBGA-40 | Flash, 8MX8, 35ns, PBGA40, 8 X 15 MM, 0.80 MM PITCH, FBGA-40 | Flash, 8MX8, 35ns, PBGA40, 8 X 15 MM, 0.80 MM PITCH, FBGA-40 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Parts packaging code | BGA | BGA | BGA | BGA |
| package instruction | BGA, | BGA, | BGA, | BGA, |
| Contacts | 40 | 40 | 40 | 40 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | 3A991.B.1.A | 3A991.B.1.A | 3A991.B.1.A | 3A991.B.1.A |
| Maximum access time | 35 ns | 35 ns | 35 ns | 35 ns |
| Other features | 100K PROGRAM/ERASE CYCLES MIN; DATA RETENTION 10 YEARS | 100K PROGRAM/ERASE CYCLES MIN; DATA RETENTION 10 YEARS | 100K PROGRAM/ERASE CYCLES MIN; DATA RETENTION 10 YEARS | 100K PROGRAM/ERASE CYCLES MIN; DATA RETENTION 10 YEARS |
| Data retention time - minimum | 10 | 10 | 10 | 10 |
| JESD-30 code | R-PBGA-B40 | R-PBGA-B40 | R-PBGA-B40 | R-PBGA-B40 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit |
| Memory IC Type | FLASH | FLASH | FLASH | FLASH |
| memory width | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of terminals | 40 | 40 | 40 | 40 |
| word count | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
| character code | 8000000 | 8000000 | 8000000 | 8000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 70 °C | 70 °C | 85 °C |
| organize | 8MX8 | 8MX8 | 8MX8 | 8MX8 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | BGA | BGA | BGA | BGA |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 | 240 | 240 | 240 |
| Programming voltage | 3 V | 3 V | 3 V | 3 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
| Nominal supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V |
| surface mount | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | BALL | BALL | BALL | BALL |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | 30 | 30 | 30 | 30 |
| type | NAND TYPE | NAND TYPE | NAND TYPE | NAND TYPE |
| Base Number Matches | 1 | 1 | 1 | 1 |