BC546,
A/B
BC547, A/B/C
BC548, A/B/C
NPN General Purpose Transistor
* "G" Lead(Pb)-Free
2
BASE
COLLECTOR
3
TO-92
1
1
EMITTER
2
3
Maximum Ratings
( TA =25
℃
unless otherwise noted)
C
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VECO
V CBO
VEBO
lC
BC546
65
80
6
BC547
45
50
6
100
BC548
30
30
6
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation
Alumina Substrate, TA = 25
℃
C
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
PD
Max
625
Unit
mW/
℃
C
Junction and Storage, Temperature
TJ, Tstg
-55 to +150
℃
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1 mAdc. lB =0)
Collector-Base Breakdown Voltage
(lC = 100
mAdc.
lE =0)
Emitter-Base Breakdown Voltage
(lE = 10
mAdc.
l C =0)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
V
(BR)CEO
65
45
30
80
50
30
Vdc
V
(BR)CBO
Vdc
V
(BR)EBO
6
Vdc
WE ITR O N
http://www.weitron.com.tw
1/5
Rev.B 27-Apr-05
BC546,
A/B
BC547, A/B/C
BC548, A/B/C
ELECTRICAL CHARACTERISTICS
(TA=25
℃
unless otherwise noted) (Countinued)
C
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(V
CE
=60V, l
B
=0)
(V
CE
=45V, l
B
=0)
(V
CE
=30V, l
B
=0)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
lCEO
0.1
mA
Collector Cutoff Current
(V
CB
=70V, l
E
=0)
(V
CB
=50V, l
E
=0)
(V
CB
=30V, l
E
=0)
lCBO
0.1
mA
Emitter Cutoff Current
(V =5.0 Vdc, lC =0)
EB
lEBO
0.1
mA
ON CHARACTERISTICS
DC current gain
(V
CE
=5V, lc=2mA)
BC546
BC547
BC548
BC547A/BC548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
110
110
110
110
200
420
450
800
800
220
450
800
0.3
h
FE
Collector-emitter saturation voltage
(l
C
=100mA, l
B
=5mA)
V
CE(sat)
V
BE(sat)
f
T
-
V
V
MHz
Base-emitter saturation voltage
(l
C
=100mA, l
B
=5mA)
-
1
Transition frequency
(V
CE
=5V, l
C
=10mA, f=100MHz)
150
-
WEITRON
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2/5
Rev.B 27-Apr-05