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BUZ900DP

Description
16 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-264
Categorysemiconductor    Discrete semiconductor   
File Size31KB,3 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

BUZ900DP Overview

16 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-264

BUZ900DP Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage160 V
Processing package descriptionTO-3PBL, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current16 A
MAGNA
TEC
20.0
5.0
BUZ900DP
BUZ901DP
MECHANICAL DATA
Dimensions in mm
3.3 Dia.
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0
1.0
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
1.2
0.6
2.8
3.4
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ900DP
160V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
BUZ901DP
200V
±14V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95

BUZ900DP Related Products

BUZ900DP BUZ901DP
Description 16 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-264 16 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-264
Number of terminals 3 3
Minimum breakdown voltage 160 V 160 V
Processing package description TO-3PBL, 3 PIN TO-3PBL, 3 PIN
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Shell connection isolation isolation
Number of components 1 1
transistor applications amplifier amplifier
Transistor component materials silicon silicon
Channel type N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply
Maximum leakage current 16 A 16 A
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