1N2160 datasheet, PDF - EEWORLD Datasheet

1N2160: Description25 A, 600 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size152KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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25 A, 600 V, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-5
package instruction	O-MUPM-D1
Contacts	1
Reach Compliance Code	compliant
Is Samacsys	N
application	POWER
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-203AB
JESD-30 code	O-MUPM-D1
JESD-609 code	e0
Maximum non-repetitive peak forward current	800 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	40 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	5 µs
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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