BA1A4M-A datasheet, PDF - EEWORLD Datasheet

BA1A4M-A: DescriptionBA1A4M-A; CategoryDiscrete semiconductor The transistor; File Size134KB，2 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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BA1A4M-A Overview

BA1A4M-A

Parameter Name	Attribute value
Brand Name	Renesas
Maker	Renesas Electronics Corporation
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	6000 ns
Maximum opening time (tons)	200 ns
Base Number Matches	1

	BA1A4M-A	BA1A4M
Description	BA1A4M-A	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT IN BAIS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	6000 ns	6000 ns
Maximum opening time (tons)	200 ns	200 ns
Base Number Matches	1	1

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