HN29V51211 Series
512M AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
ADE-203-1221 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all
sector address) and less than 32,768 sectors.
Features
•
On-board single power supply (V
CC
): V
CC
= 2.7 V to 3.6 V
•
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 32,113 sectors)
Data register: (2048 + 64) bytes
•
Multi-level memory cell
2 bit/per memory cell
•
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
•
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HN29V51211 Series
•
Erase mode
Single sector erase ((2048 + 64) byte unit)
•
Fast serial read access time:
First access time: 50 µs (max)
Serial access time: 50 ns (max)
•
Low power dissipation:
I
CC1
= 2 mA (typ) (Read)
I
CC2
= 20 mA (max) (Read)
I
SB2
= 50 µA (max) (Standby)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program)
I
SB3
= 20 µA (max) (Deep standby)
•
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (579 sectors) within usable sectors
Ordering Information
Type No.
HN29V51211T-50
Available sector
More than 32,113 sectors
Package
12.0
×
18.40 mm
2
0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
2
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