HN29W12811T-60 datasheet, PDF - EEWORLD Datasheet

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HN29W12811T-60: Description128M AND type Flash Memory More than 8,029-sector (135,657,984-bit); Categorystorage storage; File Size331KB，42 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/; Environmental Compliance

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HN29W12811T-60 Overview

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811T-60 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Hitachi （Renesas ）
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknow
Maximum access time	60 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	134217728 bi
Memory IC Type	FLASH
memory width	1
Number of functions	1
Number of departments/size	8K
Number of terminals	48
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX1
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	3.3 V
Programming voltage	3.3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	2K
Maximum standby current	0.000005 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	NO
type	AND TYPE
width	12 mm

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HN29W12811 Series

128M AND type Flash Memory

More than 8,029-sector (135,657,984-bit)

ADE-203-1183C (Z)

Rev. 2.0

Feb. 7, 2001

Description

The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has

fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are

controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase

is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all

sector address).

Features

•

On-board single power supply (V

): V

= 3.3 V

0.3 V

•

Organization



AND Flash Memory: (2048 + 64) bytes

(More than 8,029 sectors)



Data register: (2048 + 64) bytes

•

Multi-level memory cell



2 bit/per memory cell

•

Automatic programming



Sector program time: 2.5 ms (typ)



System bus free



Address, data latch function



Internal automatic program verify function



Status data polling function

•

Automatic erase



Single sector erase time: 1.0 ms (typ)



System bus free



Internal automatic erase verify function



Status data polling function

HN29W12811T-60 Related Products

	HN29W12811T-60	HN29W12811
Description	128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)	128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

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