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HN3C09FU

Description
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
CategoryDiscrete semiconductor    The transistor   
File Size87KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

HN3C09FU Overview

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

HN3C09FU Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.85 pF
Collector-emitter maximum voltage12 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)80
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)7000 MHz
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