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HN58V65API-10E

Description
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
Categorystorage    storage   
File Size216KB,28 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

HN58V65API-10E Overview

64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

HN58V65API-10E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time100 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDIP-T28
length35.6 mm
memory density65536 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/5 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height5.7 mm
Maximum standby current0.000005 A
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.6 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
width15.24 mm
Maximum write cycle time (tWC)10 ms
HN58V65AI Series
HN58V66AI Series
HN58V65A-SR Series
HN58V66A-SR Series
64k EEPROM (8-kword
×
8-bit)
Ready/Busy function,
RES
function (HN58V66A)
Wide Temperature Range version
REJ03C0153-0300Z
(Previous ADE-203-759B(Z) Rev.2.0)
Rev. 3.00
Feb.02.2004
Description
Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and
programmable EEPROM’s organized as 8192-word
×
8-bit. They have realized high speed, low power
consumption and high reliability by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
Single supply: 2.7 to 5.5 V
Access time:
100 ns (max) at 2.7 V
V
CC
< 4.5 V
70 ns (max) at 4.5 V
V
CC
5.5 V
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110
µW
(max)
On-chip latches: address, data,
CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data
polling and Toggle bit
Data protection circuit on power on/off
Rev.3.00, Feb.02.2004, page 1 of 26

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