CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
A
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA (Figure 9)
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
A
= 55
o
C
MIN
30
1
-
-
-
-
-
-
-
-
-
V
DS
= 15V, V
GS
= 10V, I
D
≅
10A
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 4)
-
-
-
Pulse Width < 10s (Figure 11)
Device Mounted on FR-4 Material
-
TYP
-
-
-
-
-
0.015
0.011
15
9
70
20
35
7.5
5.8
1600
685
115
-
MAX
-
-
1
25
100
0.020
0.0135
30
20
100
80
60
-
-
-
-
-
50
UNITS
V
V
µA
µA
nA
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
I
GSS
r
DS(ON)
V
GS
=
±16V
I
D
= 8A, V
GS
= 4.5V (Figures 6, 8)
I
D
= 10A, V
GS
= 10V (Figures 6, 8)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
R
θJA
V
DD
= 25V, I
D
≅
1A,
R
L
= 25Ω, V
GEN
=
10V,
R
GS
= 6Ω
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 2.3A (Figure 7)
I
SD
= 2.3A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
0.75
50
MAX
1.1
80
UNITS
V
ns
8-4
HP4410DY
Typical Performance Curves
50
V
GS
= 10V - 5V
4V
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
40
30
3V
20
30
20
10
10
T
A
= 125
o
C
-55
o
C
25
o
C
0
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. TRANSFER CHARACTERISTICS
0.030
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
r
DS(ON)
, DRAIN TO SOURCE
ON STATE RESISTANCE (W)
0.025
C, CAPACITANCE (pF)
0.020
V
GS
= 4.5V
0.015
0.010
0.005
0
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
4200
3500
2800
2100
1400
C
OSS
700
0
0
6
12
18
24
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
C
ISS
FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
DS
= 15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 10A
8
2.0
V
GS
= DURATION = 80µs
PULSE 10V
DUTY CYCLE = 0.5% MAX
I
D
= 10A
1.5
6
1.0
4
2
0.5
0
0
9
18
27
36
45
Q
g
, GATE CHARGE (nC)
0
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
FIGURE 5.
GATE TO SOURCE VOLTAGE vs GATE CHARGE
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
8-5
HP4410DY
Typical Performance Curves
50
I
SD
, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
r
DS(ON)
, DRAIN TO SOURCE
ON STATE RESISTANCE (W)
0.08
Unless Otherwise Specified
(Continued)
0.10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
J
= 150
o
C
10
T
J
= 25
o
C
0.06
I
D
= 10A
0.04
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE TO SOURCE VOLTAGE
0.4
0.2
V
GS(TH)
VARIANCE (V)
80
60
0.0
I
D
= 250µA
-0.2
-0.4
-0.6
-0.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0.01
POWER (W)
40
20
0.10
1.00
t, PULSE WIDTH (s)
10.00
FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE
vs JUNCTION TEMPERATURE
FIGURE 10. SINGLE PULSE POWER CAPABILITY vs PULSE
WIDTH
2
1
THERMAL IMPEDANCE
DUTY CYCLE = 0.5
0.2
0.1
0.1
0.05
0.02
SINGLE PULSE
0.01
10
-4
10
-3
10
-2
10
-1
1
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
T
J
= P
D
x Z
θ
JA
x R
θ
JA
+ T
A
SURFACE MOUNTED
10
30
P
DM
Z
θ
JA
, NORMALIZED
t, RECTANGULAR PULSE DURATION (s)
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
8-6
HP4410DY
Test Circuits and Waveforms
V
DS
t
ON
t
d(ON)
R
L
V
DS
+
t
OFF
t
d(OFF)
t
r
t
f
90%
90%
V
GS
-
DUT
R
GS
V
DD
0
10%
90%
10%
V
GS
V
GS
0
10%
50%
PULSE WIDTH
50%
FIGURE 12. SWITCHING TIME TEST CIRCUIT
FIGURE 13. SWITCHING TIME WAVEFORM
V
DS
R
L
V
DD
Q
g
Q
gd
Q
gs
V
GS
V
GS
+
V
DD
-
DUT
I
g(REF)
I
g(REF)
0
0
V
DS
FIGURE 14. GATE CHARGE TEST CIRCUIT
FIGURE 15. GATE CHARGE WsAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
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