M29F040-90XK6TR datasheet, PDF

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M29F040-90XK6TR: Description4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory; Categorystorage storage; File Size230KB，31 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M29F040-90XK6TR Overview

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

M29F040-90XK6TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	QFJ
package instruction	PLASTIC, LCC-32
Contacts	32
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	90 ns
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.995 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.56 mm
Department size	64K
Maximum standby current	0.00005 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	11.455 mm

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M29F040

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

NOT FOR NEW DESIGN

M29F040 is replaced by the M29F040B

10% SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

FAST ACCESS TIME: 70ns

BYTE PROGRAMMING TIME: 10µs typical

ERASE TIME

– Block: 1.0 sec typical

– Chip: 2.5 sec typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

ERASE SUSPEND and RESUME MODES

LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 25µA typical

– Automatic Stand-by mode

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

Table 1. Signal Names

A0-A18

DQ0-DQ7

Address Inputs

Data Input / Outputs

Chip Enable

Output Enable

Write Enable

Supply Voltage

Ground

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

Figure 1. Logic Diagram

VCC

A0-A18

DQ0-DQ7

M29F040

VSS

AI01372

November 1999

This is information on a product still in production but not recommended for new designs.

1/31

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