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M29F010B90K6

Description
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
Categorystorage    storage   
File Size216KB,35 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29F010B90K6 Overview

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

M29F010B90K6 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeQFJ
package instructionPLASTIC, LCC-32
Contacts32
Reach Compliance Code_compli
ECCN codeEAR99
Maximum access time70 ns
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density1048576 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.56 mm
Department size16K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width11.43 mm
M29F010B
1 Mbit (128Kb x8, uniform block) single supply Flash memory
Feature summary
Single 5V±10% supply voltage for Program,
Erase and Read operations
Access time: 45 ns
Programming time
– 8 µs per byte typical
8 uniform 16 Kbytes memory blocks
Program/Erase controller
– Embedded byte Program algorithm
– Embedded multi-block/Chip Erase
algorithm
– Status Register Polling and Toggle bits
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch programming
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
20 years data retention
Defectivity below 1 ppm/year
Electronic signature
– Manufacturer code: 20h
– Device code: 20h
ECOPACK
®
packages available
PLCC32 (K)
TSOP32 (N)
8 x 20mm
November 2006
Rev 5
1/35
www.st.com
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