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M29F002BNT55K3

Description
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
Categorystorage    storage   
File Size144KB,22 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29F002BNT55K3 Overview

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

M29F002BNT55K3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeQFJ
package instructionPLASTIC, LCC-32
Contacts32
Reach Compliance Code_compli
ECCN codeEAR99
Maximum access time55 ns
Other featuresTOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density2097152 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1,2,1,3
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.56 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTIN LEAD
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width11.43 mm
M29F002BT, M29F002BNT
M29F002BB, M29F002BNB
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
s
SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45 ns
PROGRAMMING TIME
– 8 µs by Byte typical
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
PLCC32 (K)
TSOP32 (N)
8 x 20mm
s
s
s
s
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
32
s
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
1
PDIP32 (P)
s
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
VCC
s
Figure 1. Logic Diagram
s
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29F002BT: B0h
– Top Device Code M29F002BNT: B0h
– Bottom Device Code M29F002BB: 34h
– Bottom Device Code M29F002BNB: 34h
G
RP
A0-A17
W
E
18
8
DQ0-DQ7
M29F002BT
M29F002BB
M29F002BNT
M29F002BNB
s
s
VSS
AI02957B
April 2002
1/22
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