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K4S641632H-TC600

Description
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54
Categorystorage    storage   
File Size144KB,14 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4S641632H-TC600 Overview

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54

K4S641632H-TC600 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G54
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals54
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
Base Number Matches1
SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
64Mb H-die SDRAM Specification
Revision 1.8
August 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.8 August 2004
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