SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
C
KTB772
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
E
F
D
FEATURES
・
Complementary to KTD882.
・Suffix
U : Qualified to AEC-Q101.
ex) KTB772-U/PU
H
J
K
G
L
℃
MAXIMUM RATING (Ta=25℃)
M
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse (Note)
Base Current (DC)
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
Tc=25℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
-40
-30
-5
-3
UNIT
V
V
V
A
1. EMITTER
2. COLLECTOR
3. BASE
N
O
1
2
3
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
Φ3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
-7
-0.6
1.5
W
10
150
-55½150
℃
℃
A
TO-126
Note : Pulse Width
≦10mS,
Duty Cycle≦50%.
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
*
*
*
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2) (Note)
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=-30V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
I
C
=-2A, I
B
=-0.2A
I
C
=-2V, I
B
=-0.2A
V
CE
=-5V, I
C
=-0.1A
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
220
160
-0.3
-1.0
80
55
MAX.
-1
-1
-
400
-0.5
-2.0
-
-
V
V
MHz
pF
UNIT
μ
A
μ
A
* Pulse Test : Pulse Width≤350μ Duty Cycle≤2% Pulsed
S,
Note: h
FE
(2) Classification
O:100½200 , Y:160½320 , GR:200½400
2018. 04. 10
Revision No : 5
1/3
KTB772
I
C
- V
CE
COLLECTOR CURRENT I
C
(A)
-1.8
-1.6
-1.2
-1.0
-0.4
0
0
-4
-8
-12
I
B
=-10mA
I
B
=-9mA
I
B
=-8mA
I
B
=-7mA
I
B
=-6mA
I
B
=-5mA
I
B
=-4mA
I
B
=-3mA
I
B
=-2mA
I
B
=-1mA
h
FE
- I
C
1K
DC CURRENT GAIN h
FE
500
300
100
50
30
10
5
3
1
-1
-3
-10
-30
-100
-300
V
CE
=-2V
-16
-20
-1K
-3K
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
,V
BE(sat)
- I
C
-10K
-5K
-3K
-1K
-500
-300
-100
-50
-30
-10
-5
-3
V
CE
(sat)
V
BE
(sat)
I
C
/I
B
=10
C
ob
- V
CB
1K
500
300
100
50
30
10
5
3
1
I
E
=0
f=1MHz
SATURATION VOLTAGE
VCE(sat), VBE(sat), (mV)
-1
-3
-10
-30
-100
-300
-1K
-3K
CAPACITANCE C
ob
(pF)
-1
-3
-10
-30
-100
-300
-1K
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-BASE VOLTAGE V
CB
(V)
CURRENT GAIN BANDWIDTH PRODUCT
f
T
(MHz)
f
T
- I
C
COLLECTOR CURRENT I
C
(A)
1K
500
300
100
50
30
10
5
3
1
-0.01
V
CE
=-5V
SAFE OPERATING AREA
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
I
C
MAX.
(PULSED)
I
C
MAX.
(CONTINUOUS)
10
S
0
μ
DC
10
OP
S
1m
m
S
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
Tc
ER
5
=2
AT
IO
C
N
-0.03
-0.1
-0.3
-1
-3
-10
1
3
10
30
100
300
1K
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2018. 04. 10
Revision No : 5
2/3