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BZX84C4V7LT116

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size860KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BZX84C4V7LT116 Overview

Zener Diode,

BZX84C4V7LT116 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.25 W
Nominal reference voltage4.7 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance6.38%
Working test current5 mA
Base Number Matches1
BZX84C4V7L
 
Zener Diode
●Outline
P
D
250
mW
Data sheet
●Feature
High reliability
Small mold type
●Inner
Circuit
●Application
Voltage regulation
●Packaging
Specification
Packing
Reel Size(mm)
Taping Width(mm)
Embossed Tape
180
8
3000
T116
D3K
●Structure
Silicon Epitaxial Planar
Basic Ordering Unit(pcs)
Taping Code
Marking
(T
●Absolute
Maximum Rating
a
=25℃)
Parameter
Symbol
Power dissipation
Junction temperature
Storage temperature
Limits
250
150
-55½150
Unit
mW
P
D
T
j
T
stg
www.rohm.com
c 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016/5/31_Rev.001
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