DIM75HST12-B000
DIM75HST12-B000
Trench Gate IGBT Module
Preliminary Information
Replaces June 2001, version DS5350-2.0
DS5350-3.0 July 2001
FEATURES
s
s
s
s
s
s
s
s
s
KEY PARAMETERS
V
CES
(max)
V
CE(sat)
(typ)
I
C25
(max)
(max)
I
C75
I
CM
(max)
t
sc
(max)
1200V
1.9V
109A
75A
225A
10
µ
s
Trench Gate
Enhancement Mode n-Channel Device
Non Punch Through Structure
High Switching Speed
Low On-state Saturation Voltage
High Input Impedance Simplifies Gate Drive
Latch-Free Operation
Fully Short Circuit Rated To 10µs
Wide RBSOA
H
I JKL M N
APPLICATIONS
s
s
s
s
s
s
High Frequency Inverters
Motor Control
Switched Mode Power Supplies
High Frequency Welding
UPS Systems
PWM Drives
5 6
1 2
7 8
3 4
A B CDE F G
The DIM75HST12-B000 is a robust non punch through
trench gate n-channel, enhancement mode insulated gate
bipolar transistor (IGBT) module designed for low power
dissipation in a wide range of low to medium voltage
applications such as power supplies and motor drives.
Trench Gate technology offers significant improvements
when compared with conventional planar IGBTs. The high
impedance gate simplifies gate drive considerations,
allowing operation directly from low power control circuitry.
Low saturation voltages minimise power dissipation,
thereby reducing the running cost of the overall system in
which they are used.
The DIM75HST12-B000 is fully short circuit rated
making it especially suited for motor control and other
arduous applications.
Typical applications include high frequency inverters
for motor control, PWM, welding and heating apparatus.
The Powerline range of IGBTs is also applicable to
switched mode and uninterruptible power supplies.
Outline type code: H (ECO-PAC)
(See Package Details for further information)
Fig.1 Pin connections - top view (not to scale)
I
L
N
H
J
M
A
NTC
B
E
G
Fig.2 DIM75HST12-B000 circuit
ORDERING INFORMATION
Order as:
DIM75HST12-B000
Note: When ordering use complete part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
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DIM75HST12-B000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 25˚C unless stated otherwise.
Symbol
V
CES
V
GES
I
C25
I
C75
I
CM
P
tot
V
isol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Continuous collector current
Pulsed collector current
Power dissipation
Isolating voltage
T
case
= 25˚C
T
case
= 75˚C
1ms, T
case
= 75˚C
T
case
= 75˚C
V
GE
= 0V
Test Conditions
Max. Units
1200
V
V
A
A
A
W
V
ac
-
±20
109
75
225
136
3000
I
isol
≤
1mA, 50/60Hz, t = 1 min
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
T
j
T
stg
-
Parameter
Thermal resistance - IGBT
Thermal resistance - Diode
Operating junction temperature range
Storage temperature range
Mounting torque
M4 Screw
Conditions
DC junction to case
DC junction to case
-
-
Min.
-
-
–40
–40
1.5
Max. Units
0.55
1.33
150
150
2.0
˚C/W
˚C/W
˚C
˚C
Nm
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM75HST12-B000
DC ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
c
= 125˚C
I
GES
V
GE(TH)
V
CE(SAT)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
= 20V, V
CE
= 0V
I
C
= 1mA, V
CE
= V
GE
V
GE
= 15V, I
C
= 75A
V
GE
= 15V, I
C
= 75A, T
c
= 125˚C
Min.
-
-
-
-
-
-
Typ.
-
-
-
7
1.9
2.1
Max.
0.6
3
1.5
-
2.3
-
Units
mA
mA
µA
V
V
V
AC ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
C
ies
C
oes
C
res
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Conditions
V
CE
= 75V, V
GE
= 15V, f = 1MHz
V
CE
= 75V, V
GE
= 15V, f = 1MHz
V
CE
= 75V, V
GE
= 15V, f = 1MHz
Min.
-
-
-
Typ.
12000
510
75
Max. Units
-
-
-
pF
pF
pF
SHORT CIRCUIT RATING
T
case
= 125˚C unless stated otherwise.
Symbol
t
sc
Parameter
Short circuit withstand time
Conditions
V
GE
= 15V, V
CE
= 80% V
CES
Min.
-
Typ.
-
Max. Units
10
µs
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
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DIM75HST12-B000
INDUCTIVE SWITCHING CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
t
d(ON)
t
r
E
ON
t
d(OFF)
t
f
E
OFF
Parameter
Turn-on delay time
Rise time
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
R
G
= 1.67Ω
Turn-off energy loss - per cycle
-
7.5
-
mJ
I
C
= 75A
V
GE
=
±15V,
V
CE
= 50%V
ces
Conditions
Min.
-
-
-
-
-
Typ.
160
15
4.6
270
40
Max. Units
-
-
-
-
-
ns
ns
mJ
ns
ns
T
case
= 125˚C unless stated otherwise.
Symbol
t
d(ON)
t
r
E
ON
t
d(OFF)
t
f
E
OFF
Parameter
Turn-on delay time
Rise time
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
R
G
= 1.67Ω
Turn-off energy loss - per cycle
-
10.5
-
mJ
I
C
= 75A
V
GE
=
±15V,
V
CE
= 50%V
ces
Conditions
Min.
-
-
-
-
-
Typ.
170
17
6
340
60
Max. Units
-
-
-
-
-
ns
ns
mJ
ns
ns
DIODE CHARACTERISTICS
T
c
= 25˚C unless stated otherwise.
Symbol
V
FM
Forward voltage
Parameter
Conditions
At I
F
= 75A peak
At I
F
= 75A peak, T
case
= 125˚C
t
rr
I
RRM
Reverse recovery time
Reverse recovery current
I
F
= 75A, di
RR
/dt = 600A/µs
V
R
= 50%V
RRM
Min.
-
-
-
-
Typ.
1.9
1.92
90
36
Max.
-
-
-
-
Units
V
V
ns
A
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM75HST12-B000
BASIC TEST CIRCUIT
V
CC
500µF
DUT
Fig.3 Basic d.c. chopper circuit
SWITCHING DEFINITIONS
+15V
0V
-15V
t
r
= t
3
- t
2
t
d(on)
= t
2
- t
1
t
3
+ 1µs
V
GE
90%
1µs
I
C
V
CE
E
on
=
t
1
∫
V
CE
. I
C
dt
10%
t
5
t
6
t
7
t
8
Fig.4 Turn-on characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
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