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HY62SF16806B-DF70C

Description
Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, FBGA-48
Categorystorage    storage   
File Size161KB,11 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY62SF16806B-DF70C Overview

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, FBGA-48

HY62SF16806B-DF70C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionTFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length8.5 mm
memory density8388608 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8/2 V
Certification statusNot Qualified
Maximum seat height1.1 mm
Minimum standby current1.2 V
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)2.3 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm
Base Number Matches1
HY62SF16806B Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
Revision History
Revision No
00
01
History
Initial Release
Draft Date
May.29.2001
Remark
Preliminary
Final
DC Electrical Characteristics
Oct.22.2002
- ICC changed 4mA -> 3mA
- ICC1 changed 25mA at 70ns -> 15mA at 70ns
- ICC1 changed 3mA at 1us -> 2mA at 1us
- ISB (TTL) changed 50uA -> 300uA
AC Test Loads
- (R1//R2) 4091Ohm // 3273Ohm -> 3070Ohm // 3150Ohm
AC Test Conditions
- Output Load changed 5pF -> 30pF
- Input Pulse Level 0.4V to 1.6V -> 0.2V to Vcc-0.2
Data Retention Electric Characteristic
- ICCDR LL-Part changed 20uA -> 10uA
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.01 /Oct. 2002
Hynix
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