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M28W320EBB70N1T

Description
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
Categorystorage    storage   
File Size220KB,45 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28W320EBB70N1T Overview

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

M28W320EBB70N1T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Code_compli
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitNO
typeNOR TYPE
width12 mm
M28W320EBT
M28W320EBB
32 Mbit (2Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V Core Power Supply
– V
DDQ
= 1.65V to 3.6V for Input/Output
s
s
Figure 1. Packages
FBGA
– V
PP
= 12V for fast Program (optional)
ACCESS TIME: 70, 85, 90,100ns
PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
TFBGA47 (ZB)
6.39 x 6.37mm
s
s
COMMON FLASH INTERFACE
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s
BLOCK PROTECTION on TWO PARAMETER
BLOCKS
– WP for Block Protection
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W320EBT: 88BCh
– Bottom Device Code, M28W320EBB: 88BDh
TSOP48 (N)
12 x 20mm
s
s
s
s
October 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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