IRGTI115U06 datasheet, PDF - EEWORLD Datasheet

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IRGTI115U06: DescriptionInsulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size49KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel,

IRGTI115U06 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MUFM-X7
Reach Compliance Code	unknown
Other features	ULTRA FAST
Shell connection	ISOLATED
Maximum collector current (IC)	130 A
Collector-emitter maximum voltage	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-MUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	379 W
Maximum power dissipation(Abs)	379 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
VCEsat-Max	2.8 V
Base Number Matches	1

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IRGTI115U06 Related Products

	IRGTI115U06	IRGKI140U06	IRGNI115U06	IRGKI115U06
Description	Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X4	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	ULTRA FAST	CHOPPER SWITCH	CHOPPER SWITCH	CHOPPER SWITCH
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	130 A	170 A	130 A	130 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN CONFIGURABLE DIODE	SINGLE WITH BUILT-IN CONFIGURABLE DIODE	SINGLE WITH BUILT-IN CONFIGURABLE DIODE
Gate emitter threshold voltage maximum	5.5 V	5.5 V	5.5 V	5.5 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V
JESD-30 code	R-MUFM-X7	R-PUFM-X7	R-PUFM-X4	R-PUFM-X7
Number of components	2	1	1	1
Number of terminals	7	7	4	7
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	379 W	500 W	379 W	379 W
Maximum power dissipation(Abs)	379 W	500 W	379 W	379 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	2.8 V	2.7 V	2.8 V	2.8 V
Base Number Matches	1	1	1	-

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