M28F256-12B1TR datasheet, PDF - EEWORLD Datasheet

M28F256-12B1TR: Description256K(32K x8, Chip Erase)FLASH MEMORY; Categorystorage storage; File Size714KB，20 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M28F256-12B1TR Overview

256K(32K x8, Chip Erase)FLASH MEMORY

Parameter Name	Attribute value
Maker	STMicroelectronics
Parts packaging code	DIP
package instruction	0.600 INCH, PLASTIC, DIP-32
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	120 ns
Other features	1000 ERASE/PROGRAM CYCLES
JESD-30 code	R-PDIP-T32
length	41.91 mm
memory density	262144 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Programming voltage	12 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
type	NOR TYPE
width	15.24 mm

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