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BZW04P136B

Description
400W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size119KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

BZW04P136B Overview

400W, BIDIRECTIONAL, SILICON, TVS DIODE

BZW04P136B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage176 V
Minimum breakdown voltage152 V
Breakdown voltage nominal value160 V
Shell connectionISOLATED
Maximum clamping voltage282 V
ConfigurationSINGLE
Minimum diode capacitance70 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation1.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage136 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
®
BZW04-5V8/376
BZW04-5V8B/376B
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 400 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s a 5mm
from case.
Tj initial = Tamb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
400
1.7
30
Unit
W
W
A
DO-15
T
stg
T
j
T
L
- 65 to + 175
175
230
°C
°C
°C
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
60
100
Unit
°C/W
°C/W
February 2003- Ed : 3A
1/6

BZW04P136B Related Products

BZW04P136B BZW04P154B BZW04P273B BZW04P78B BZW04P94B BZW04P342B
Description 400W, BIDIRECTIONAL, SILICON, TVS DIODE 400W, BIDIRECTIONAL, SILICON, TVS DIODE 400W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN 400W, BIDIRECTIONAL, SILICON, TVS DIODE 400W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN 400W, BIDIRECTIONAL, SILICON, TVS DIODE
Is it Rohs certified? incompatible conform to conform to conform to conform to incompatible
Reach Compliance Code compliant not_compliant not_compliant not_compliant not_compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Base Number Matches 1 1 1 1 1 1
Maker STMicroelectronics STMicroelectronics STMicroelectronics - STMicroelectronics -
package instruction O-PALF-W2 - PLASTIC, F126, 2 PIN - PLASTIC, F126, 2 PIN O-PALF-W2
Other features UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED - UL RECOGNIZED
Maximum breakdown voltage 176 V - 352 V 100 V - 440 V
Minimum breakdown voltage 152 V - 304 V 86.5 V - 380 V
Breakdown voltage nominal value 160 V - 320 V 91 V - 400 V
Shell connection ISOLATED - ISOLATED ISOLATED - ISOLATED
Maximum clamping voltage 282 V - 564 V 162 V - 706 V
Configuration SINGLE - SINGLE SINGLE - SINGLE
Minimum diode capacitance 70 pF - 42.5 pF 105 pF - 37.5 pF
Diode component materials SILICON - SILICON SILICON - SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-PALF-W2 - O-PALF-W2 O-PALF-W2 - O-PALF-W2
Maximum non-repetitive peak reverse power dissipation 400 W - 400 W 400 W - 400 W
Number of components 1 - 1 1 - 1
Number of terminals 2 - 2 2 - 2
Maximum operating temperature 175 °C - 175 °C 175 °C - 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND - ROUND
Package form LONG FORM - LONG FORM LONG FORM - LONG FORM
polarity BIDIRECTIONAL - BIDIRECTIONAL BIDIRECTIONAL - BIDIRECTIONAL
Maximum power dissipation 1.7 W - 1.7 W 1.7 W - 1.7 W
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 136 V - 273 V 78 V - 342 V
Maximum reverse current 5 µA - 5 µA 5 µA - 5 µA
surface mount NO - NO NO - NO
technology AVALANCHE - AVALANCHE AVALANCHE - AVALANCHE
Terminal form WIRE - WIRE WIRE - WIRE
Terminal location AXIAL - AXIAL AXIAL - AXIAL
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