MCC
Features
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
BCW66H
NPN Small
Signal Transistor
330mW
SOT-23
A
D
l
Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
Low Current, Low Voltage
l
Epitaxial Planar Die Construction
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Marking: EH
l
Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
F
E
C
B
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Base Current(DC)
Peak Base Current
Power Dissipation@T
s
=79
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Soldering Point
Operating & Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
d
R
θJA
R
θJS
Value
45
75
5
800
1000
100
200
330
285
(1)
215
Unit
V
V
V
mA
mA
mA
mA
mW
o
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
G
H
J
K
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
C/W
C/W
o
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
o
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
T
j
, T
STG
-55~150
C
Notes:
(1) Mounted on FR-4 printed-circuit board
.037
.950
.037
.950
www.mccsemi.com
BCW66H
Electrical Characteristics
Parameter
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100µA
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage
at I
C
= 10µA, I
B
= 0
Emitter-Base Breakdown Voltage
at I
E
= 10µA, I
C
= 0
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150°C
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
Gain-Bandwidth Product
at V
CE
= 10V, I
C
= 20mA, f = 100MHz
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
Note:
(1) Pulse test: t
≤
300µs, D = 2%
Ratings at 25°C ambient temperature unless otherwise specified.
MCC
Symbol
Min.
TYP.
Max.
Unit
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V(
BR)CEO
V(
BR)CBO
V(
BR)EBO
I
CBO
I
CBO
I
EBO
80
180
250
100
–
–
–
–
630
–
–
–
–
–
–
–
45
75
5
–
–
–
–
–
–
–
0.3
0.7
1.25
2
–
–
–
V
V
V
V
V
V
V
–
–
–
–
–
–
20
20
20
nA
µA
nA
f
T
C
CB
C
EB
–
–
–
100
6
60
–
–
–
MH
Z
pF
pF
www.mccsemi.com
京公网安备 11010802033920号
EEWORLD
