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70T631S10BCGI

Description
Dual-Port SRAM, 256KX18, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 HEIGHT, 1 MM PITCH, GREEN, BGA-256
Categorystorage    storage   
File Size437KB,27 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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70T631S10BCGI Overview

Dual-Port SRAM, 256KX18, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 HEIGHT, 1 MM PITCH, GREEN, BGA-256

70T631S10BCGI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionBGA-256
Contacts256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee1
length17 mm
memory density4718592 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5,2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum standby current0.02 A
Minimum standby current2.4 V
Maximum slew rate0.445 mA
Maximum supply voltage (Vsup)2.6 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width17 mm
Base Number Matches1
Features
HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
IDT70T633/1S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
U B
L
LB
L
Full hardware support of semaphore signaling between
ports on-chip
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array and 208-ball fine pitch
Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
C E
0L
CE
1L
C E
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
C E
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
C E
0R
CE
1R
TDO
JTAG
TCK
TMS
T R ST
R/W
L
R/W
R
B U S Y
L(2,3)
S EM
L
INT
L(3)
ZZ
(4)
(4)
ZZ
L
ZZ
R
NOTES:
CONTROL
LOGIC
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
B U S Y
R(2,3)
M/S
SEM
R
IN T
R(3)
5670 drw 01
JUNE 2012
DSC-5670/9
1
©2012 Integrated Device Technology, Inc.

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