•
JAN level (2N3500LJ)
•
JANTX level (2N3500LJX)
2N3500L
D a ta S h e e t
•
JANTXV level (2N3500LJV)
Silicon NPN Transistor
Description
Semicoa
Corporation
offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3500LJ)
•
JANTX level (2N3500LJX)
•
JANTXV level (2N3500LJV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 5620
Reference document:
MIL-PRF-19500/366
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
150
150
6
300
1
5.71
175
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright© 200
9
Rev. H.2
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3500L
Silicon NPN Transistor
D a ta S h e e t
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CEO
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 150 Volts
V
CB
= 75 Volts
V
CB
= 75 Volts, T
A
= 150°C
V
CE
= 120 Volts
V
EB
= 6 Volts
V
EB
= 4 Volts
Min
150
10
50
50
1
10
25
Typ
Max
Units
Volts
µA
nA
µA
µA
µA
nA
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE7
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 300 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
T
A
= -55°C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
Min
20
25
35
40
15
22
Typ
Max
Units
120
0.8
1.2
0.2
0.4
Volts
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
NF
1
Noise Figure
NF
2
Test Conditions
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 10 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
CE
= 10 Volts, I
C
= 0.5 mA,
f = 1 kHz, R
g
= 1 kΩ
V
CE
= 10 Volts, I
C
= 0.5 mA,
f = 10 kHz, R
g
= 1 kΩ
V
EB
= 5 Volts, I
C
= 150 mA,
I
B1
= 15 mA
I
C
= 150 mA, I
B1
=I
B2
=15 mA
Min
1.5
35
Typ
Max
8
300
8
80
16
dB
6
pF
pF
Units
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
t
ON
t
OFF
115
1,150
ns
ns
Copyright© 200
9
Rev. H.2
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
NXP MCU
京公网安备 11010802033920号
EEWORLD
