DIODE 0.2 A, SILICON, SIGNAL DIODE, Signal Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LELF-R2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JESD-30 code | O-LELF-R2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Maximum output current | 0.2 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum reverse recovery time | 0.004 µs |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal form | WRAP AROUND |
| Terminal location | END |
| Base Number Matches | 1 |
| BAS86135 | BAS86112 | |
|---|---|---|
| Description | DIODE 0.2 A, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.2 A, SILICON, SIGNAL DIODE, Signal Diode |
| Maker | NXP | NXP |
| package instruction | O-LELF-R2 | O-LELF-R2 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE |
| JESD-30 code | O-LELF-R2 | O-LELF-R2 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Maximum output current | 0.2 A | 0.2 A |
| Package body material | GLASS | GLASS |
| Package shape | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified |
| Maximum reverse recovery time | 0.004 µs | 0.004 µs |
| surface mount | YES | YES |
| technology | SCHOTTKY | SCHOTTKY |
| Terminal form | WRAP AROUND | WRAP AROUND |
| Terminal location | END | END |
| Base Number Matches | 1 | 1 |
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