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SM564048004X3G6

Description
DRAM
Categorystorage    storage   
File Size234KB,25 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM564048004X3G6 Overview

DRAM

SM564048004X3G6 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
SMART
Features
®
SM5640480UUXUGU
July 14, 1997
Modular Technologies
32MByte (4M x 64) DRAM Module - 2Mx8 based
168-pin DIMM, Buffered
Part Numbers
SM56404800UXUGU
SM56404801UXUGU
SM56404808UXUGU
SM56404809UXUGU
:
:
:
:
Standard
:
JEDEC
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
2K/4K
Device Physicals
:
300/400mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
5.250" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390052-1 (5.0V)/390052-4 (3.3V)
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5640440UUXUGU
:
4Mx64,
4Mx4 based.
Functional Diagram
CAS0#
CAS1#
CAS2#
CAS3#
WE0#
OE0#
A0#
RAS0#
CAS4#
CAS5#
CAS6#
CAS7#
WE2#
OE2#
B0#
RAS2#
2Mx32
Block
2Mx32
Block
2Mx32
Block
2Mx32
Block
RAS1#
DQ0~DQ31
DQ32~DQ63
RAS1#
DQ0~DQ63
Notes : 1. A0~A10/A11 are connected to all DRAMs through buffers
(A10 & A11 are NC for 2K refresh module).
2. All signals including PDs (with exception of RAS#, Data and IDs) are buffered.
3. Each 2Mx32 Block comprises of four 2Mx8 DRAMs.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
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