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GE28F800B3TA70

Description
Flash, 512KX16, 70ns, PBGA48, VFBGA-48
Categorystorage    storage   
File Size1MB,71 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

GE28F800B3TA70 Overview

Flash, 512KX16, 70ns, PBGA48, VFBGA-48

GE28F800B3TA70 Parametric

Parameter NameAttribute value
Parts packaging codeBGA
package instructionVFBGA-48
Contacts48
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
Other featuresTOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PBGA-B48
length7.91 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width6.5 mm
Base Number Matches1
Intel
®
Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V V
PP
fast production programming
Intel
®
Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports parameter storage, streaming
data (for example, voice)
1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
High Performance
— 2.7 V – 3.6 V: 70 ns max access time
Extended Cycling Capability
—Minimum 100,000 block erase cycles
Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
Automatic Power Savings Feature
—Typical I
CCS
after bus inactivity
Standard Surface Mount Packaging
—48-Ball CSP packages
—40-Lead and 48-Lead TSOP packages
Block Locking
— V
CC
-level control through Write Protect
WP#
Density and Footprint Upgradeable for
common package
—8-, 16-, 32-, and 64-Mbit densities
Low Power Consumption
— 9 mA typical read current
ETOX™ VIII (0.13
µm)
Flash
Technology
—16-Mbit and 32-Mbit densities
Absolute Hardware-Protection
— V
PP
= GND option
— V
CC
lockout voltage
ETOX™ VII (0.18
µm)
Flash Technology
—16-, 32-, and 64-Mbit densities
Extended Temperature Operation
— –40 °C to +85 °C
ETOX ™ VI (0.25µm) Flash Technology
—8-, 16-, and 32-Mbit densities
Automated Program and Block Erase
— Status registers
Bo not use the x8 option for new designs
The Intel
®
Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13
µm
and 0.18
µm
technologies, is a feature-rich solution at a low system cost. The B3 device in x16 is
available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family is
available only in 40-lead TSOP and 48-ball µBGA* packages. For additional information about
this product family, see the Intel website:
http://www.intel.com/design/flash.
Notice:
This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290580, Revision: 020
18 Aug 2005

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