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BSP315

Description
1A, 50V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric View All

BSP315 Overview

1A, 50V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET

BSP315 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)4 A
Certification statusCOMMERCIAL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
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