Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | LAPIS Semiconductor Co., Ltd. |
| package instruction | TSOP, TSOP40/44,.46,32 |
| Reach Compliance Code | unknown |
| Maximum access time | 80 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDSO-G40 |
| JESD-609 code | e0 |
| memory density | 4194304 bit |
| Memory IC Type | FAST PAGE DRAM |
| memory width | 16 |
| Number of terminals | 40 |
| word count | 262144 words |
| character code | 256000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256KX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSOP |
| Encapsulate equivalent code | TSOP40/44,.46,32 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 1024 |
| reverse pinout | YES |
| self refresh | NO |
| Maximum standby current | 0.0005 A |
| Maximum slew rate | 0.065 mA |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.8 mm |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| MSM51V4170-80TS-L | MSM51V4170-80JS | MSM51V4170-80TS-K | MSM51V4170-70JS | MSM51V4170-70TS-L | MSM51V4170-70TS-K | |
|---|---|---|---|---|---|---|
| Description | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40 | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | LAPIS Semiconductor Co., Ltd. | LAPIS Semiconductor Co., Ltd. | LAPIS Semiconductor Co., Ltd. | LAPIS Semiconductor Co., Ltd. | LAPIS Semiconductor Co., Ltd. | LAPIS Semiconductor Co., Ltd. |
| package instruction | TSOP, TSOP40/44,.46,32 | SOJ, SOJ40,.44 | TSOP, TSOP40/44,.46,32 | SOJ, SOJ40,.44 | TSOP, TSOP40/44,.46,32 | TSOP, TSOP40/44,.46,32 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 80 ns | 80 ns | 80 ns | 70 ns | 70 ns | 70 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-PDSO-G40 | R-PDSO-J40 | R-PDSO-G40 | R-PDSO-J40 | R-PDSO-G40 | R-PDSO-G40 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| Memory IC Type | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| memory width | 16 | 16 | 16 | 16 | 16 | 16 |
| Number of terminals | 40 | 40 | 40 | 40 | 40 | 40 |
| word count | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 256KX16 | 256KX16 | 256KX16 | 256KX16 | 256KX16 | 256KX16 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | TSOP | SOJ | TSOP | SOJ | TSOP | TSOP |
| Encapsulate equivalent code | TSOP40/44,.46,32 | SOJ40,.44 | TSOP40/44,.46,32 | SOJ40,.44 | TSOP40/44,.46,32 | TSOP40/44,.46,32 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
| self refresh | NO | NO | NO | NO | NO | NO |
| Maximum standby current | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A |
| Maximum slew rate | 0.065 mA | 0.065 mA | 0.065 mA | 0.08 mA | 0.08 mA | 0.08 mA |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | YES | YES | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | J BEND | GULL WING | J BEND | GULL WING | GULL WING |
| Terminal pitch | 0.8 mm | 1.27 mm | 0.8 mm | 1.27 mm | 0.8 mm | 0.8 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |