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GS81285Z18GT-167IT

Description
ZBT SRAM, 8MX18, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
Categorystorage    storage   
File Size821KB,24 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
Download Datasheet Parametric View All

GS81285Z18GT-167IT Overview

ZBT SRAM, 8MX18, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

GS81285Z18GT-167IT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time8 ns
Other featuresPIPELINED AND FLOW THROUGH ARCHITECTURE ALSO OPERATES AT 3.3V MINIMUM SUPPLY
Maximum clock frequency (fCLK)167 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density150994944 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.24 A
Minimum standby current2.3 V
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1
Preliminary
GS81285Z18/36T-300/250/200/167
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 4Mb, 9Mb, 18Mb and 36Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
144Mb 2-Die Module
Synchronous NBT SRAM
300 MHz–167 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS81285Z18/36T may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS81285Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Functional Description
The GS81285Z18/36T is a 144Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-300
2.3
3.3
550
630
5.5
5.5
420
465
-250
2.5
4.0
480
550
6.5
6.5
370
405
-200
3.0
5.0
420
480
7.5
7.5
340
370
-167
3.4
6.0
385
430
8.0
8.0
330
360
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Packages listed with the additional “G” designator are 6/6 RoHS compliant.
Rev: 1.00 1/2008
1/24
© 2008, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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