|
BUZ104SLE3045A |
BUZ104SLE3045 |
| Description |
Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN |
Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN |
| Parts packaging code |
D2PAK |
D2PAK |
| package instruction |
PLASTIC, TO-263, 3 PIN |
PLASTIC, TO-263, 3 PIN |
| Contacts |
4 |
4 |
| Reach Compliance Code |
unknown |
compliant |
| ECCN code |
EAR99 |
EAR99 |
| Other features |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) |
52 mJ |
52 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
55 V |
55 V |
| Maximum drain current (Abs) (ID) |
12.5 A |
12.5 A |
| Maximum drain current (ID) |
12.5 A |
12.5 A |
| Maximum drain-source on-resistance |
0.11 Ω |
0.11 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code |
TO-263AB |
TO-263AB |
| JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
| Number of components |
1 |
1 |
| Number of terminals |
2 |
2 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
175 °C |
175 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
SMALL OUTLINE |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
35 W |
35 W |
| Maximum pulsed drain current (IDM) |
50 A |
50 A |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
YES |
YES |
| Terminal form |
GULL WING |
GULL WING |
| Terminal location |
SINGLE |
SINGLE |
| transistor applications |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
| Base Number Matches |
1 |
1 |
京公网安备 11010802033920号
EEWORLD
