BLF6G38-10,118 datasheet, PDF - EEWORLD Datasheet

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BLF6G38-10,118: DescriptionTRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power; CategoryDiscrete semiconductor The transistor; File Size94KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF6G38-10,118 Overview

TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power

BLF6G38-10,118 Parametric

Parameter Name	Attribute value
Source Url Status Check Date	2013-06-14 00:00:00
Is it Rohs certified?	conform to
Maker	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
Maximum drain current (Abs) (ID)	3.1 A
Maximum drain current (ID)	3.1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-CDFP-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLF6G38-10; BLF6G38-10G

WiMAX power LDMOS transistor

Rev. 01 — 3 February 2009

Product data sheet

1. Product proﬁle

1.1 General description

10 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3600 MHz.

Table 1.

Typical performance

RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation

1-carrier N-CDMA

[1]

[2]

(MHz)

3400 to 3600

(V)

L(AV)

(W)

(dB)

(%)

ACPR

885k

(dBc)

−49

[2]

ACPR

1980k

(dBc)

−64

[2]

Single carrier N-CDMA with pilot, paging sync and 6 trafﬁc channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.

Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 trafﬁc channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on

CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and

an I

of 130 mA:

Qualiﬁed up to a maximum V

operation of 32 V

Integrated ESD protection

Excellent ruggedness

High efﬁciency

Excellent thermal stability

Designed for broadband operation

Internally matched for ease of use

Low gold plating thickness on leads

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

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