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BB909A113

Description
DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode
CategoryDiscrete semiconductor    diode   
File Size66KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BB909A113 Overview

DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode

BB909A113 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other features2.5% MATCHED SETS AVAILABLE
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Minimum diode capacitance ratio12
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse current0.01 µA
Reverse test voltage28 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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