V
CE
I
C
=
=
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
PRELIMINARY
Doc. No. 5SYA1528-01 Sep. 01
Low-loss, rugged IGBT SPT
chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact baseless
package
Snap-on PCB assembly
Integrated PTC substrate
temperature sensor
• •
•
•
•
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
Symbol
V
CES
I
C
I
CM
V
GES
Ptot
SwSOA
SCSOA
I
F
I
FM
(T
vj
= 25°C, unless specified otherwise)
Conditions
V
GE
shorted
T
hs
= 60°C
Pulse: tp=1ms, T
hs
= 60°C
T
hs
= 25°C per switch
I
C
= 600 A, V
CEM
= 1200 V, V
CC
≤
1000 V,
V
GE
=
±15
V, T
vj
=125°C
voltages measured on auxiliary terminals
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 µs,
V
GE
=
±15
V, T
vj
=125 °C
300
Pulse: tp = 1ms, T
hs
= 60°C
600
A
A
Values
1200
300
600
±20
960
Unit
V
A
A
V
W
ABB Semiconductors AG reserves the right to change specifications without notice.
5SNS 0300U120100
Maximum Rated Values
(cont.)
Parameter
Junction Temperature
Storage Temperature
Isolation Voltage
Symbol
T
vj
T
tstg
/T
cop
V
iso
(T
vj
= 25°C, unless specified otherwise)
Conditions
Values
- 40 ~ 150
- 40 ~ 125
Unit
°C
°C
V
Nm
Nm
1 min, f = 50Hz
(M6) Hole 6.5mm diameter
M6 screws, max. insertion
depth :10mm
Self tapping screw, Hole
2.5mm diameter, 6.0mm deep
Spring pins, pitch of pins =
4mm, pcb thickness = 1.6mm
2500
2~3
3~5
Base to Heatsink
Main Terminals
Mounting
PCB mounting
Gate, Emitter Aux.
IGBT Characteristic Values
Parameter
Collector-Emitter
Saturation Voltage
Collector Cut-off Current
Gate-Emitter leakage
Current
Gate-Emitter Threshold
Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Module stray Inductance
Plus to Minus
Resistance terminal-chip
Symbol
(T
vj
= 25°C, unless specified otherwise)
Conditions
T
vj
= 25 °C
T
vj
= 125 °C
min. typ.
1.95
2.10
20
±500
4.5
4000
27
6.5
max. Unit
2.30
V
V
mA
nA
V
nC
nF
nF
nF
µs
µs
µs
µs
mJ
mJ
20
T
hs
= 25 °C
T
hs
= 125 °C
0.85
1.0
nH
mΩ
V
CE(sat)
* I
C
= 300 A, V
GE
= 15 V
I
CES
I
GES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 °C
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
V
GE(TO)
I
C
= 12 mA, V
CE
= V
GE
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
L
s DC
R
CC’+EE’
I
C
= 300 A, V
CC
= 600 V,R
gon
= 3.3
Ω,
T
vj
= 125 °C, V
GE
=
±15
V
I
C
= 300 A, V
CC
= 600 V, R
goff
= 3.3
Ω,
T
vj
= 125 °C,V
GE
=
±15
V
I
C
= 300 A, T
vj
= 125 °C,
V
CC
= 600 V, V
GE
=
±15
V,
inductive load, integrated up
R
goff
= 3.3
Ω
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
R
gon
= 3.3
Ω
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
I
C
= 300 A, V
CE
= 600 V, V
GE
= -15 to 15 V
6.5
5.4
0.17
0.08
0.75
0.07
26.0
34.0
* Note 1: Collector emitter saturation voltage is given at die level.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1528-01 Sep. 01
2 of 8
5SNS 0300U120100
Diode Characteristic Values
Parameter
Forward Voltage
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Symbol
V
F
*
I
rrm
Q
rr
t
rr
(T
vj
= 25°C, unless specified otherwise)
Conditions
I
F
= 300 A
T
vj
= 25 °C
T
vj
= 125 °C
min.
typ.
2.00
2.00
345
57
0.18
27
0.85
1.0
max.
2.40
Unit
V
A
µC
µs
mJ
mΩ
I
F
= 300 A, R
gon
= 3.3
Ω,
V
CC
= 600 V,
V
GE
=
±15
V, T
vj
= 125 °C
I
F
= 300 A, T
vj
= 125 °C, V
CC
= 600 V,
Reverse Recovery Energy
E
rec
R
gon
= 3.3
Ω,
V
GE
=
±15
V,
inductive load, fully integrated
T
hs
= 25 °C
Resistance terminal-chip
R
CC’+EE’
T
hs
= 125 °C
* Note 2: Forward voltage is given at die level
Thermal Characteristics
Parameter
IGBT Thermal Resistance
Junction to Heatsink
Diode Thermal Resistance
Junction to Heatsink
Equivalent IGBT Thermal
Resistance Junct. to Case
Equivalent Diode Thermal
Resistance Junct. to Case
Temperature sensor
Symbol
R
th
j-h
Igbt
R
th
j-h
Diode
R
th
j-c
Igbt
R
th
j-c
Diode
PTC
(T
j
= 25°C, unless specified otherwise)
Conditions
Heatsink:
flatness < +/- 50 µm,
roughness < 6 µm without ridge
Thermal grease:
thickness: 30 µm < t < 50 µm
min.
typ.
max.
Unit
0.130 °C/W
0.190 °C/W
0.060 °C/W
0.120 °C/W
Thermistor : R=1kΩ ±3%@25°C,B-value (25°C/100°C): -760K ±2%
Mechanical Properties
Parameter
Dimensions
Clearance Distance
Surface Creepage
Distance
Weight
Symbol
Conditions
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
min.
9.5
11
9.5
12.5
485
typ.
max.
Unit
mm
mm
mm
mm
mm
gr
L* W* H Typical , see outline drawing
D
C
D
SC
184.5 * 106.5 * 34.5
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1528-01 Sep. 01
3 of 8
5SNS 0300U120100
Electrical configuration
Outline drawing
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1528-01 Sep. 01
4 of 8
5SNS 0300U120100
Fig. 1
Typ. Output Characteristics
at Tvj=25°C
Fig. 2
Typ. Output Characteristics
at Tvj=125°C
Fig. 3
Typ. Transfer Characteristics
Fig. 4
Typ. Gate charge Characteristics
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1528-01 Sep. 01
5 of 8
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