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BC850BWE6327

Description
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size897KB,9 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance
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BC850BWE6327 Overview

100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC850BWE6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
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BC850BWE6327 Related Products

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Description 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maker Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
Reach Compliance Code unknown unknown unknown unknown unknown unknow
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 30 V 45 V 45 V 45 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 420 200 200 420 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
surface mount YES YES YES YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Is it lead-free? Lead free Lead free - Lead free Lead free Lead free
Is it Rohs certified? conform to conform to - conform to conform to conform to
JESD-609 code e3 e3 - e3 e3 e3
Peak Reflow Temperature (Celsius) 260 260 - 260 260 260
Maximum time at peak reflow temperature 40 40 - 40 40 40
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