HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 1/3
HSD669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSB649A
Absolute Maximum Ratings
(Ta=25°C)
TO-126ML
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .....................................................................................+150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) .................................................................................................. 1.5 A
IC Collector Current (Pulse) ................................................................................................. 3 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
180
160
5
-
-
-
100
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
14
Max.
-
-
-
10
1
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
IC=500mA, IB=50mA
IC=150mA, VCE=5V
IC=150mA, VCE=5V
IC=500mA, VCE=5V
IC=150mA , VCE=5V
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
C
100-200
D
180-320
HSD669A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 2/3
Saturation Voltage & Collector Current
1000
125 C
o
Saturation Voltage (mV)
hFE
100
25 C
75 C
o
o
125 C
100
75 C
o
o
hFE @ VCE=5V
25 C
V
CE(sat)
@ I
C
=10I
B
o
10
1
10
100
1000
10000
10
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
25 C
o
ON Voltage & Collector Current
1000
25 C
75 C
o
o
Saturation Voltage (mV)
75 C
o
125 C
o
ON Voltage (mV)
125 C
V
BE(ON)
@ V
CE
=5V
o
V
BE(sat)
@ I
C
=10I
B
100
1
10
100
1000
10000
100
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Capacitance & Reverse-Biased Voltage
100
100000
Safe Operating Area
Collector Current (mA)
10000
Capacitance (pF)
10
Cob
1000
100
P
T
=1ms
P
T
=100ms
P
T
=1s
1
0.1
1
10
100
10
1
10
100
1000
Reverse-Biased Voltage (V)
Forward Voltage (V)
HSD669A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 3/3
A
H
SD
Rank
Control Code
B
D
E
F
3
2
I
G
1
J
M
L
K
O
H
Date Code
6 6 9 A
C
Style: Pin 1.Emitter 2.Collector 3.Base
N
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
*: Typical
DIM
A
B
C
D
E
F
G
H
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1131
0.1231
0.0737
0.0837
0.0294
0.0494
0.0462
0.0562
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
2.87
3.12
1.87
2.12
0.74
1.25
1.17
1.42
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
-
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
-
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: L94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD669A
HSMC Product Specification
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