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HGTD5N60B3DS

Description
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

HGTD5N60B3DS Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, TO-252AA

HGTD5N60B3DS Parametric

Parameter NameAttribute value
MakerHarris
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 2217  2643  2101  1472  294  45  54  43  30  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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