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HSM276SR

Description
SILICON, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HSM276SR Overview

SILICON, MIXER DIODE

HSM276SR Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSC-59A
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance0.9 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
HSM276SR
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-040D (Z)
Rev. 4
Aug. 1994
Features
High forward current, Low capacitance.
HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM276SR
Laser Mark
C9
Package Code
MPAK
Pin Arrangement
3
2
1
(Top View)
1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Average forward current
Junction temperature
Storage temperature
Note: Per one device
Symbol
V
R
I
O
*
Tj
Tstg
Value
3
30
125
–55 to +125
Unit
V
mA
°C
°C

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